2026-06-16T09:12:32Z https://archive.materialscloud.org/oai2d

oai:materialscloud.org:1871 2023-08-25T09:25:03Z openaire_data community-mcarchive

Zhou, Jiaqi Zhou, Jiaqi Poncé, Samuel Charlier, Jean-Christophe 2023-08-25 Spin Hall effect (SHE) plays a critical role in spintronics since it can convert charge current to spin current. Using state-of-the-art ab initio calculations including quadrupole and spin-orbit coupling, the charge and spin transports have been investigated in pristine and doped two-dimensional (2D) III-V semiconductors. Valence bands induce a strong scattering which limits charge conductivity in the hole-doped system, where spin Hall conductivity is enhanced by the spin-orbit splitting, yielding an ultrahigh spin Hall ratio 𝜉≈0.9 in GaAs monolayer at room temperature. application/gzip text/markdown https://doi.org/10.24435/materialscloud:z5-xz oai:materialscloud.org:1871 mcid:2023.131 eng Materials Cloud https://archive.materialscloud.org/communities/mcarchive https://doi.org/10.24435/materialscloud:vn-bs info:eu-repo/semantics/openAccess Creative Commons Attribution Non Commercial Share Alike 4.0 International https://creativecommons.org/licenses/by-nc-sa/4.0/legalcode Quantum ESPRESSO Wannier functions two-dimensional spin Hall effect transport Enhanced spin Hall ratio in two-dimensional III-V semiconductors info:eu-repo/semantics/other