2026-06-26T00:47:39Z https://archive.materialscloud.org/oai2d

oai:materialscloud.org:2111 2024-03-26T09:43:32Z openaire_data community-mcarchive

Roisin, Nicolas Brunin, Guillaume Rignanese, Gian-Marco Flandre, Denis Raskin, Jean-Pierre Poncé, Samuel Roisin, Nicolas Brunin, Guillaume Rignanese, Gian-Marco Flandre, Denis Raskin, Jean-Pierre Poncé, Samuel 2024-03-26 Strain engineering is a widely used technique for enhancing the mobility of charge carriers in semiconductors, but its effect is not fully understood. In this work, we perform first-principles calculations to explore the variations of the mobility of electrons and holes in silicon upon deformation by uniaxial strain up to 2% in the [100] crystal direction. We compute the π₁₁ and π₁₂ electron piezoresistances based on the low-strain change of resistivity with temperature in the range 200 K to 400 K, in excellent agreement with experiment. We also predict them for holes which were only measured at room temperature. Remarkably, for electrons in the transverse direction, we predict a minimum room-temperature mobility about 1200 cm²/Vs at 0.3% uniaxial tensile strain while we observe a monotonous increase of the longitudinal transport, reaching a value of 2200 cm²/Vs at high strain. We confirm these findings experimentally using four-point bending measurements, establishing the reliability of our first-principles calculations. For holes, we find that the transport is almost unaffected by strain up to 0.3% uniaxial tensile strain and then rises significantly, more than doubling at 2% strain. Our findings open new perspectives to boost the mobility by applying a stress in the [100] direction. This is particularly interesting for holes for which shear strain was thought for a long time to be the only way to enhance the mobility. text/markdown application/zip https://doi.org/10.24435/materialscloud:hn-kj oai:materialscloud.org:2111 mcid:2024.50 eng Materials Cloud https://archive.materialscloud.org/communities/mcarchive https://doi.org/10.24435/materialscloud:2t-gn info:eu-repo/semantics/openAccess Creative Commons Attribution Non Commercial 4.0 International https://creativecommons.org/licenses/by-nc/4.0/legalcode silicon strain mobility piezoresistive first principles Phonon-limited mobility for electrons and holes in highly-strained silicon info:eu-repo/semantics/other