2026-05-27T14:21:01Z https://archive.materialscloud.org/oai2d

oai:materialscloud.org:2286 2024-08-07T14:28:01Z openaire_data community-mcarchive

Kępa, Marcin Focke, Niels Cywiński, Łukasz Krzywda, Jan A. Kępa, Marcin Focke, Niels Cywiński, Łukasz Krzywda, Jan A. 2024-08-07 Due to presence of magnetic field gradient needed for coherent spin control, dephasing of single-electron spin qubits in silicon quantum dots is often dominated by 1/f charge noise. We investigate theoretically fluctuations of ground state energy of an electron in gated quantum dot in realistic Si/SiGe structure. We assume that the charge noise is caused by motion of charges trapped at the semiconductor-oxide interface. We consider a realistic range of trapped charge densities, ρ∼10¹⁰ cm⁻², and typical lenghtscales of isotropically distributed displacements of these charges, δr≤1 nm, and identify pairs (ρ,δr) for which the amplitude and shape of the noise spectrum is in good agreement with spectra reconstructed in recent experiments on similar structures. application/zip text/markdown text/markdown https://doi.org/10.24435/materialscloud:mx-0w oai:materialscloud.org:2286 mcid:2024.118 eng Materials Cloud https://doi.org/10.48550/arXiv.2303.13968 https://doi.org/10.1063/5.0151029 https://pubs.aip.org/aip/apl/article-abstract/123/3/034005/2903215/Simulation-of-1-f-charge-noise-affecting-a-quantum?redirectedFrom=fulltext https://archive.materialscloud.org/communities/mcarchive https://doi.org/10.24435/materialscloud:x3-6f info:eu-repo/semantics/openAccess Creative Commons Attribution 4.0 International https://creativecommons.org/licenses/by/4.0/legalcode Quantum dots Simulation Charge noise Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure info:eu-repo/semantics/other