<?xml version='1.0' encoding='UTF-8'?>
<OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd">
  <responseDate>2026-06-29T19:38:01Z</responseDate>
  <request verb="GetRecord" identifier="oai:materialscloud.org:2378" metadataPrefix="oai_dc">https://archive.materialscloud.org/oai2d</request>
  <GetRecord>
    <record>
      <header>
        <identifier>oai:materialscloud.org:2378</identifier>
        <datestamp>2024-10-08T12:45:47Z</datestamp>
        <setSpec>openaire_data</setSpec>
        <setSpec>community-mcarchive</setSpec>
      </header>
      <metadata>
        <oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
          <dc:contributor>Xia, Chen Hao</dc:contributor>
          <dc:contributor>Deuschle, Leonard</dc:contributor>
          <dc:contributor>Cao, Jiang</dc:contributor>
          <dc:contributor>Maeder, Alexander</dc:contributor>
          <dc:contributor>Luisier, Mathieu</dc:contributor>
          <dc:creator>Xia, Chen Hao</dc:creator>
          <dc:creator>Deuschle, Leonard</dc:creator>
          <dc:creator>Cao, Jiang</dc:creator>
          <dc:creator>Maeder, Alexander</dc:creator>
          <dc:creator>Luisier, Mathieu</dc:creator>
          <dc:date>2024-10-08</dc:date>
          <dc:description>Band-to-band tunnelling field-effect transistors (TFETs) have long been considered as promising candidates for future low-power logic applications. However, fabricated TFETs rarely reach sub-60 mV/dec sub-threshold swings (SS) at room temperature. Previous theoretical studies identified Auger processes as possible mechanisms for the observed degradation of SS. Through first-principles quantum transport simulations incorporating carrier-carrier interactions within the Non-equilibrium Green's Function formalism through self-consistent GW approximation, we confirm here that Auger processes are indeed at least partly responsible for the poor performance of TFETs. Using a carbon nanotube TFET as testbed, we show that carrier-carrier scattering alone significantly increases the OFF-state current of these devices, thus worsening their sub-threshold behavior. The results are in the folder uploaded.</dc:description>
          <dc:format>application/zip</dc:format>
          <dc:format>text/markdown</dc:format>
          <dc:format>text/markdown</dc:format>
          <dc:identifier>https://doi.org/10.24435/materialscloud:sm-90</dc:identifier>
          <dc:identifier>oai:materialscloud.org:2378</dc:identifier>
          <dc:identifier>mcid:2024.149</dc:identifier>
          <dc:language>eng</dc:language>
          <dc:publisher>Materials Cloud</dc:publisher>
          <dc:relation>https://doi.org/10.1109/LED.2024.3417307</dc:relation>
          <dc:relation>https://ieeexplore.ieee.org/document/10565899</dc:relation>
          <dc:relation>https://archive.materialscloud.org/communities/mcarchive</dc:relation>
          <dc:relation>https://doi.org/10.24435/materialscloud:8b-0s</dc:relation>
          <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
          <dc:rights>Creative Commons Attribution 4.0 International</dc:rights>
          <dc:rights>https://creativecommons.org/licenses/by/4.0/legalcode</dc:rights>
          <dc:subject>electronic structure</dc:subject>
          <dc:subject>transport</dc:subject>
          <dc:subject>Wannier functions</dc:subject>
          <dc:title>Influence of carrier-carrier interactions on the sub-threshold swing of band-to-band tunnelling transistors</dc:title>
          <dc:type>info:eu-repo/semantics/other</dc:type>
        </oai_dc:dc>
      </metadata>
    </record>
  </GetRecord>
</OAI-PMH>
