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        <identifier>oai:materialscloud.org:570</identifier>
        <datestamp>2020-10-23T13:58:25Z</datestamp>
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          <dc:contributor>Klinkert, Cedric</dc:contributor>
          <dc:contributor>Campi, Davide</dc:contributor>
          <dc:contributor>Marzari, Nicola</dc:contributor>
          <dc:contributor>Luisier, Mathieu</dc:contributor>
          <dc:creator>Klinkert, Cedric</dc:creator>
          <dc:creator>Szabó, Aron</dc:creator>
          <dc:creator>Stieger, Christian</dc:creator>
          <dc:creator>Campi, Davide</dc:creator>
          <dc:creator>Marzari, Nicola</dc:creator>
          <dc:creator>Luisier, Mathieu</dc:creator>
          <dc:date>2020-10-23</dc:date>
          <dc:description>Due to their remarkable properties, single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal dichalcogenides, are still far from delivering the expected performance. Based on a recent theoretical study that predicts the existence of more than 1800 exfoliable 2-D materials, we investigate here the 100 most promising contenders for logic applications.</dc:description>
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          <dc:identifier>https://doi.org/10.24435/materialscloud:p8-se</dc:identifier>
          <dc:identifier>oai:materialscloud.org:570</dc:identifier>
          <dc:identifier>mcid:2020.130</dc:identifier>
          <dc:language>eng</dc:language>
          <dc:publisher>Materials Cloud</dc:publisher>
          <dc:relation>https://doi.org/10.1021/acsnano.0c02983</dc:relation>
          <dc:relation>https://arxiv.org/abs/2004.04434</dc:relation>
          <dc:relation>https://archive.materialscloud.org/communities/mcarchive</dc:relation>
          <dc:relation>https://doi.org/10.24435/materialscloud:57-ev</dc:relation>
          <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
          <dc:rights>Creative Commons Attribution 4.0 International</dc:rights>
          <dc:rights>https://creativecommons.org/licenses/by/4.0/legalcode</dc:rights>
          <dc:subject>2D materials</dc:subject>
          <dc:subject>ab initio device simulation</dc:subject>
          <dc:subject>next-generation field-effect transistors</dc:subject>
          <dc:subject>performance comparison</dc:subject>
          <dc:subject>MARVEL/DD3</dc:subject>
          <dc:subject>CSCS</dc:subject>
          <dc:subject>SNSF</dc:subject>
          <dc:subject>PRACE</dc:subject>
          <dc:title>2‐D materials for ultrascaled field-effect transistors: one hundred candidates under the ab initio microscope</dc:title>
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