2026-07-20T16:59:27Z https://archive.materialscloud.org/oai2d

oai:materialscloud.org:618 2020-11-13T10:49:14Z community-mcarchive openaire_data

Nam, Chang-Yong Tiwale, Nikhil Subramanian, Ashwanth Dai, Zhongwei Sikder, Sayantani Sadowski, Jerzy T. Nam, Chang-Yong 2020-11-13 Recently, ultrathin metal-oxide thin film transistors (TFTs) have shown very high on-off ratio and ultra sharp subthreshold swing, making them promising candidates for applications beyond conventional large-area electronics. While the on-off operation in typical TFTs results primarily from the modulation of charge carrier density by gate voltage, the high on-off ratio in ultrathin oxide TFTs can be associated with a large carrier mobility modulation, whose origin remains unknown. We investigate 3.5 nm-thick titanium oxide based ultrathin TFTs exhibiting 6-decade on-off ratio, predominantly driven by gate induced mobility modulation. The power law behavior of the mobility features two regimes, with a very high exponent at low gate voltages, unprecedented for oxide TFTs. We find that this phenomenon is well explained by the presence of high-density tail states near the conduction band edge, which supports carrier transport via variable range hopping. The observed two-exponent regimes reflect the bi-exponential distribution of the density of band-tail states. This improved understanding would be significant in fabricating high-performance ultrathin oxide devices. application/zip application/zip text/plain text/markdown https://doi.org/10.24435/materialscloud:1t-g7 oai:materialscloud.org:618 mcid:2020.146 eng Materials Cloud https://doi.org/10.1038/s43246-020-00096-w https://archive.materialscloud.org/communities/mcarchive https://doi.org/10.24435/materialscloud:rh-29 info:eu-repo/semantics/openAccess Creative Commons Attribution 4.0 International https://creativecommons.org/licenses/by/4.0/legalcode amorphous semiconductor titanium oxide field-effect transistor variable range hopping mobility modulation Large mobility modulation in ultrathin amorphous titanium oxide transistors info:eu-repo/semantics/other