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        <datestamp>2026-07-21T13:36:05Z</datestamp>
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          <dc:contributor>Linscott, Edward</dc:contributor>
          <dc:creator>Linscott, Edward</dc:creator>
          <dc:creator>Carta, Alberto</dc:creator>
          <dc:creator>Marzari, Nicola</dc:creator>
          <dc:date>2026-07-21</dc:date>
          <dc:description>&amp;lt;p&amp;gt;This archive contains the data supporting the manuscript of the same title. The calculations are for bulk antiferromagnetic (type-II) NiO in a four-atom rhombohedral cell, and comprise the Wannierization of the Kohn-Sham manifold, the linear-response calculation of the on-site (U) and inter-site (V) Hubbard parameters, DFT+U+V calculations, and the construction of the block-diagonalizing and hybridized projectors discussed in the manuscript.&amp;lt;/p&amp;gt;</dc:description>
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          <dc:identifier>mcid:2026.138</dc:identifier>
          <dc:language>eng</dc:language>
          <dc:publisher>Materials Cloud</dc:publisher>
          <dc:relation>https://doi.org/10.48550/arXiv.2607.18071</dc:relation>
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          <dc:rights>Creative Commons Attribution 4.0 International</dc:rights>
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          <dc:subject>MARVEL/P4</dc:subject>
          <dc:subject>Hubbard-corrected density-functional theory</dc:subject>
          <dc:subject>electronic structure</dc:subject>
          <dc:title>DFT+U+V is equivalent to DFT+U with density-dependent hybridized projectors</dc:title>
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