2026-06-18T16:58:47Z https://archive.materialscloud.org/oai2d

oai:materialscloud.org:qfdfa-cs517 2025-08-04T08:53:05Z openaire_data community-mcarchive

Chen, Jie-Cheng Leveillee, Joshua Van de Walle, Chris G. Giustino, Feliciano 2025-08-04 <p>Gallium nitride (GaN) is a wide-bandgap semiconductor of significant interest for applications in solid-state lighting, power electronics, and radio-frequency amplifiers. An important limitation of this semiconductor is its low intrinsic hole mobility, which hinders the development of p-channel devices and the large-scale integration of GaN CMOS in next-generation electronics. Prior research has explored the use of strain to improve the hole mobility of GaN, but a systematic analysis of all possible strain conditions and their impact on the mobility is lacking. In this study, we introduce a piezomobility tensor notation to characterize the relationship between applied strain and hole mobility in GaN. To map the strain-dependence of the hole mobility, we solve the ab initio Boltzmann transport equation, accounting for electron-phonon scattering and GW quasiparticle energy corrections.</p> application/gzip text/plain https://doi.org/10.24435/materialscloud:zy-qw oai:materialscloud.org:qfdfa-cs517 mcid:2025.121 eng Materials Cloud https://archive.materialscloud.org/communities/mcarchive https://doi.org/10.24435/materialscloud:pk-hr info:eu-repo/semantics/openAccess Creative Commons Attribution 4.0 International https://creativecommons.org/licenses/by/4.0/legalcode nitrides electron-phonon coupling hole mobility Design of high-mobility p-type GaN via the piezomobility tensor info:eu-repo/semantics/other