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        <identifier>oai:materialscloud.org:vz6hg-tvd13</identifier>
        <datestamp>2026-04-13T14:05:27Z</datestamp>
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          <dc:contributor>Bonacci, Miki</dc:contributor>
          <dc:creator>Bonacci, Miki</dc:creator>
          <dc:creator>Schüler, Michael</dc:creator>
          <dc:creator>Colonna, Nicola</dc:creator>
          <dc:creator>Marzari, Nicola</dc:creator>
          <dc:date>2026-04-13</dc:date>
          <dc:description>&amp;lt;p&amp;gt;Germanium&amp;ndash;silicon&amp;ndash;germanium (Ge/Si&amp;lt;sub&amp;gt;x&amp;lt;/sub&amp;gt;Ge&amp;lt;sub&amp;gt;1-x&amp;lt;/sub&amp;gt;) heterostructures have emerged as a prominent platform for high-mobility electronic devices and hole-spin&amp;ndash;based quantum technologies. In this work, we present an&amp;nbsp;&amp;lt;em&amp;gt;ab initio&amp;lt;/em&amp;gt; study of strained germanium, demonstrating that biaxial compressive strain in a Ge quantum well strongly alters the valence-band structure. Specifically, the strain lifts the heavy-hole/light-hole degeneracy and modifies the effective masses (significantly enhances hole mobility). Our findings offer a comprehensive theoretical description of the combined effects of strain and quantum confinement on the valence bands of Ge quantum wells, providing a solid foundation for predictive modeling of Ge-based high-mobility electronics and hole-spin qubits.&amp;lt;/p&amp;gt;</dc:description>
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          <dc:identifier>https://doi.org/10.24435/materialscloud:yg-hd</dc:identifier>
          <dc:identifier>oai:materialscloud.org:vz6hg-tvd13</dc:identifier>
          <dc:identifier>mcid:2026.75</dc:identifier>
          <dc:language>eng</dc:language>
          <dc:publisher>Materials Cloud</dc:publisher>
          <dc:relation>https://doi.org/10.48550/arXiv.2603.18753</dc:relation>
          <dc:relation>https://renkulab.io/p/aiida/materials-cloud-archive/sessions/01JZAQ1T34GEE1S98BV1300FXY/start?archive_url=https://archive.materialscloud.org/api/records/vz6hg-tvd13/files/export_eos_Ge.aiida/content</dc:relation>
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          <dc:relation>https://doi.org/10.24435/materialscloud:93-t0</dc:relation>
          <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
          <dc:rights>Creative Commons Attribution 4.0 International</dc:rights>
          <dc:rights>https://creativecommons.org/licenses/by/4.0/legalcode</dc:rights>
          <dc:subject>DFT</dc:subject>
          <dc:subject>Wannier interpolation</dc:subject>
          <dc:subject>Wannier90</dc:subject>
          <dc:subject>Quantum ESPRESSO</dc:subject>
          <dc:subject>Strained Germanium</dc:subject>
          <dc:subject>tight-binding</dc:subject>
          <dc:subject>quantum confinement</dc:subject>
          <dc:subject>AiiDA</dc:subject>
          <dc:title>Ab initio study of strain and quantum confinement shaping the valence-band structure of Ge quantum wells</dc:title>
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