materialscloud:2020.0022/v1

Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET

Dipanwita Dutta1*, Deb Sankar De2, Daniel Fan1, Shantanu Roy2, Giovanni Alfieri3, Massimo Camarda1, Maximilian Amsler4, Joerg Lehmann3, Holger Bartolf3, Stefan Goedecker2, Thomas Andreas Jung1*

1 Laboratory for Micro and Nanotechnology, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland

2 Departement of Physics, University of Basel, CH-4056 Basel, Switzerland

3 ABB Switzerland Ltd., Corporate Research, CH-5405 Baden-Dättwil, Switzerland

4 Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA

* Corresponding authors emails: dipanwita.dutta@psi.ch , thomas.jung@psi.ch
DOI10.24435/materialscloud:2020.0022/v1 [version v1]

Publication date: Feb 20, 2020

How to cite this record

Dipanwita Dutta, Deb Sankar De, Daniel Fan, Shantanu Roy, Giovanni Alfieri, Massimo Camarda, Maximilian Amsler, Joerg Lehmann, Holger Bartolf, Stefan Goedecker, Thomas Andreas Jung, Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET, Materials Cloud Archive 2020.0022/v1 (2020), doi: 10.24435/materialscloud:2020.0022/v1.

Description

High power SiC MOSFET technologies are critical for energy saving in, e.g., distribution of electrical power. They suffer, however, from low near-interface mobility, the origin of which has not yet been conclusively determined. Here, we present unique concerting evidence for the presence of interface defects in the form of carbon clusters at native thermally processed oxides of SiC. These clusters, with a diameter of 2–5 nm, are HF-etch resistant and possess a mixture of graphitic (sp2) and amorphous (sp3 mixed in sp2) carbon bonds different from the normal sp3 carbon present in 4H-SiC. The nucleation of such defects during thermal oxidation as well as their atomic structure is elucidated by state-of-the-art atomistic and electronic structure calculations. In addition, our property prediction techniques show the impact of the simulated carbon accumulates on the electronic structure at the interface.

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SiC_SiO.zip
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README.txt
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Keywords

SNSF MARVEL/DD1 4H-SiC MOSFET Microfabrication

Version history:

2020.0022/v1 (version v1) [This version] Feb 20, 2020 DOI10.24435/materialscloud:2020.0022/v1