This document outlines brief description of the datasets made available in this repository. For more detailed explanation please refer to the original article [N. Tiwale et al., Large mobility modulation in ultrathin amorphous titanium oxide transistors, Communications Materials, accepted (2020)]. Fig. 1(b) XRD pattern acquired from 3.5 nm thick TiOx thin film displaying no significant crystallinity except for weak scattering peaks potentially corresponding to anatase/rutile phases. Fig. 2(a) Output characteristics of the TiOx TFT depicting linear-ohmic behavior at low Vd evolving into hard saturation at high Vd. Fig. 2(b) Transfer characteristics of the TiOx TFT showing high on-off ratio (~ 6 decades), Von of ~24.6 V, and Vth of ~48.5 V. Fig. 2(c) Vg-dependent field-effect mobility with power law fitting for Vg > 60 V and Vg < 60 V, respectively. The exponent value of 0.78 for Vg > 60 V corresponds to the TLC, whereas the value of 2.18 for Vg < 60 V suggests VRH transport. Fig. 3(a) High-resolution XPS spectra of Ti 2p of ultrathin TiOx film annealed in forming gas (4% H2/Ar). Fig. 3(b) High-resolution XPS spectra of Ti 2p of ultrathin TiOx film annealed in O2. Fig. 3(c) High-resolution XPS spectra of O 1s of ultrathin TiOx film annealed in forming gas (4% H2/Ar). Fig. 3(d) High-resolution XPS spectra of O 1s of ultrathin TiOx film annealed in O2. Fig. 4(a) Transfer characteristics of the TiOx TFT fabricated using ultrathin TiOx film annealed in oxygen atmosphere (b) saturation field effect mobility variation with gate voltage with power law fits for Vg > 50 V and Vg < 50 V. The exponent values of 1.85 and 3.28 indicate that the carrier transport occurs via VRH. The decrease in the number of available defects states however restricts the charge mobility. Fig. 4(c) Transfer characteristics of the TiOx TFT fabricated using forming gas annealing and the PMMA top-coat, leading to the passivation of surface defects and, consequently, a small increase in the on-state current due to decreased carrier scattering. (d) saturation field effect mobility variation with gate voltage and power law fit for Vg > 40 V and Vg < 40 V with the exponents of 0.79 and 2.99 indicating the VRH transport at low Vg changing towards TLC transport at high Vg. Fig. 5(a) Variation in carrier density, n (blue line) and the position of E_F compared with Ec with respect to the Vg (red line) changed above Von. Fig. 5(c) Linear-regime transfer characteristics extracted from the output characteristics of ultrathin TiOx TFT prepared by forming-gas annealing. Fig. 5(d) Linear mobility variation with gate voltage with the power-law exponent for VRH regime at low Vg exhibiting the value of 3.04 and the TLC transport regime at high Vg exhibiting the value of 0.8.