2‐D materials for ultrascaled field-effect transistors: one hundred candidates under the ab initio microscope
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{
"created": "2020-10-08T12:48:15.106209+00:00",
"revision": 9,
"metadata": {
"doi": "10.24435/materialscloud:p8-se",
"references": [
{
"doi": "10.1021/acsnano.0c02983",
"type": "Journal reference",
"url": "https://pubs.acs.org/doi/10.1021/acsnano.0c02983",
"citation": "C. Klinker, A. Szabo, C. Stieger, D. Campi, N. Marzari, M. Luisier, ACS Nano 14, 8605\u20138615 (2020)"
},
{
"doi": "",
"type": "Preprint",
"url": "https://arxiv.org/abs/2004.04434",
"citation": "C. Klinker, A. Szabo, C. Stieger, D. Campi, N. Marzari, M. Luisier, arXiv:2004.04434 (2020)"
}
],
"_oai": {
"id": "oai:materialscloud.org:570"
},
"keywords": [
"2D materials",
"ab initio device simulation",
"next-generation field-effect transistors",
"performance comparison",
"MARVEL/DD3",
"CSCS",
"SNSF",
"PRACE"
],
"is_last": true,
"publication_date": "Oct 23, 2020, 13:58:25",
"owner": 214,
"license_addendum": null,
"contributors": [
{
"givennames": "Cedric",
"email": "cedrick@iis.ee.ethz.ch",
"familyname": "Klinkert",
"affiliations": [
"Integrated System Laboratory, ETH Zurich, CH-8092 Zurich, Switzerland"
]
},
{
"givennames": "Aron",
"familyname": "Szab\u00f3",
"affiliations": [
"Integrated System Laboratory, ETH Zurich, CH-8092 Zurich, Switzerland"
]
},
{
"givennames": "Christian",
"familyname": "Stieger",
"affiliations": [
"Integrated System Laboratory, ETH Zurich, CH-8092 Zurich, Switzerland"
]
},
{
"givennames": "Davide",
"email": "davide.campi@epfl.ch",
"familyname": "Campi",
"affiliations": [
"Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne, CH-1015 Lausanne, Switzerland"
]
},
{
"givennames": "Nicola",
"email": "nicola.marzari@epfl.ch",
"familyname": "Marzari",
"affiliations": [
"Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne, CH-1015 Lausanne, Switzerland"
]
},
{
"givennames": "Mathieu",
"email": "mluisier@iis.ee.ethz.ch",
"familyname": "Luisier",
"affiliations": [
"Integrated System Laboratory, ETH Zurich, CH-8092 Zurich, Switzerland"
]
}
],
"description": "Due to their remarkable properties, single-layer 2-D materials appear as excellent candidates to extend Moore\u2019s scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal dichalcogenides, are still far from delivering the expected performance. Based on a recent theoretical study that predicts the existence of more than 1800 exfoliable 2-D materials, we investigate here the 100 most promising contenders for logic applications.",
"title": "2\u2010D materials for ultrascaled field-effect transistors: one hundred candidates under the ab initio microscope",
"edited_by": 100,
"license": "Creative Commons Attribution 4.0 International",
"id": "570",
"_files": [
{
"key": "README.txt",
"description": "Instructions",
"size": 4416,
"checksum": "md5:92be1967d2cc4890e586c64a0478aad6"
},
{
"key": "data.tar.gz",
"description": "Input Data for Simulation",
"size": 22353094,
"checksum": "md5:acfb30bcd7249669c3e3615f8a817ec8"
}
],
"mcid": "2020.130",
"version": 1,
"status": "published",
"conceptrecid": "569"
},
"updated": "2020-10-23T11:58:25.302574+00:00",
"id": "570"
}