Large mobility modulation in ultrathin amorphous titanium oxide transistors


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<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Tiwale, Nikhil</dc:creator>
  <dc:creator>Subramanian, Ashwanth</dc:creator>
  <dc:creator>Dai, Zhongwei</dc:creator>
  <dc:creator>Sikder, Sayantani</dc:creator>
  <dc:creator>Sadowski, Jerzy T.</dc:creator>
  <dc:creator>Nam, Chang-Yong</dc:creator>
  <dc:date>2020-11-13</dc:date>
  <dc:description>Recently, ultrathin metal-oxide thin film transistors (TFTs) have shown very high on-off ratio and ultra sharp subthreshold swing, making them promising candidates for applications beyond conventional large-area electronics. While the on-off operation in typical TFTs results primarily from the modulation of charge carrier density by gate voltage, the high on-off ratio in ultrathin oxide TFTs can be associated with a large carrier mobility modulation, whose origin remains unknown. We investigate 3.5 nm-thick titanium oxide based ultrathin TFTs exhibiting 6-decade on-off ratio, predominantly driven by gate induced mobility modulation. The power law behavior of the mobility features two regimes, with a very high exponent at low gate voltages, unprecedented for oxide TFTs. We find that this phenomenon is well explained by the presence of high-density tail states near the conduction band edge, which supports carrier transport via variable range hopping. The observed two-exponent regimes reflect the bi-exponential distribution of the density of band-tail states. This improved understanding would be significant in fabricating high-performance ultrathin oxide devices.</dc:description>
  <dc:identifier>https://archive.materialscloud.org/record/2020.146</dc:identifier>
  <dc:identifier>doi:10.24435/materialscloud:1t-g7</dc:identifier>
  <dc:identifier>mcid:2020.146</dc:identifier>
  <dc:identifier>oai:materialscloud.org:618</dc:identifier>
  <dc:language>en</dc:language>
  <dc:publisher>Materials Cloud</dc:publisher>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>Creative Commons Attribution 4.0 International https://creativecommons.org/licenses/by/4.0/legalcode</dc:rights>
  <dc:subject>amorphous semiconductor</dc:subject>
  <dc:subject>titanium oxide</dc:subject>
  <dc:subject>field-effect transistor</dc:subject>
  <dc:subject>variable range hopping</dc:subject>
  <dc:subject>mobility modulation</dc:subject>
  <dc:title>Large mobility modulation in ultrathin amorphous titanium oxide transistors</dc:title>
  <dc:type>Dataset</dc:type>
</oai_dc:dc>