Large mobility modulation in ultrathin amorphous titanium oxide transistors

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<oai_dc:dc xmlns:dc="" xmlns:oai_dc="" xmlns:xsi="" xsi:schemaLocation="">
  <dc:creator>Tiwale, Nikhil</dc:creator>
  <dc:creator>Subramanian, Ashwanth</dc:creator>
  <dc:creator>Dai, Zhongwei</dc:creator>
  <dc:creator>Sikder, Sayantani</dc:creator>
  <dc:creator>Sadowski, Jerzy T.</dc:creator>
  <dc:creator>Nam, Chang-Yong</dc:creator>
  <dc:description>Recently, ultrathin metal-oxide thin film transistors (TFTs) have shown very high on-off ratio and ultra sharp subthreshold swing, making them promising candidates for applications beyond conventional large-area electronics. While the on-off operation in typical TFTs results primarily from the modulation of charge carrier density by gate voltage, the high on-off ratio in ultrathin oxide TFTs can be associated with a large carrier mobility modulation, whose origin remains unknown. We investigate 3.5 nm-thick titanium oxide based ultrathin TFTs exhibiting 6-decade on-off ratio, predominantly driven by gate induced mobility modulation. The power law behavior of the mobility features two regimes, with a very high exponent at low gate voltages, unprecedented for oxide TFTs. We find that this phenomenon is well explained by the presence of high-density tail states near the conduction band edge, which supports carrier transport via variable range hopping. The observed two-exponent regimes reflect the bi-exponential distribution of the density of band-tail states. This improved understanding would be significant in fabricating high-performance ultrathin oxide devices.</dc:description>
  <dc:publisher>Materials Cloud</dc:publisher>
  <dc:rights>Creative Commons Attribution 4.0 International</dc:rights>
  <dc:subject>amorphous semiconductor</dc:subject>
  <dc:subject>titanium oxide</dc:subject>
  <dc:subject>field-effect transistor</dc:subject>
  <dc:subject>variable range hopping</dc:subject>
  <dc:subject>mobility modulation</dc:subject>
  <dc:title>Large mobility modulation in ultrathin amorphous titanium oxide transistors</dc:title>