This file is automatically generated. It contains the descriptions of each uploaded file as provided by the user.

• G=200.data: The P-V curves data simulated at 200 irradiation and temperature at 25°C.
• G=400.data: The P-V curves data simulated at 400 irradiation and temperature at 25°C.
• G=600.data: The P-V curves data simulated at 600 irradiation and temperature at 25°C.
• G=800.data: The P-V curves data simulated at 800 irradiation and temperature at 25°C.
• G=1000.data: The P-V curves data simulated at 1000 irradiation and temperature at 25°C.
• IV_G=200.data: The I-V curves data simulated at 200 irradiation and temperature at 25°C.
• IV_G=400.data: The I-V curves data simulated at 400 irradiation and temperature at 25°C.
• IV_G=600.data: The I-V curves data simulated at 600 irradiation and temperature at 25°C.
• IV_G=800.data: The I-V curves data simulated at 800 irradiation and temperature at 25°C.
• IV_G=1000.data: The I-V curves data simulated at 1000 irradiation and temperature at 25°C.
• InGaP_IV.data: The I-V simulated curve data of the sub-cell InGaP at irradiation at 1000 and temperature at 25°C.
• GaAS_IV.data: The I-V simulated curve data of the sub-cell GaAs at irradiation at 1000 and temperature at 25°C.
• Ge_IV.data: The I-V simulated curve data of the sub-cell Ge at irradiation at 1000 and temperature at 25°C.
• MJ_IV.data: The I-V simulated curve data of the triple junction solar cell InGaP/GaAs/Ge at irradiation at 1000 and temperature at 25°C.
• InGaP_PV.data: The P-V simulated curve data of the sub-cell InGaP at irradiation at 1000 and temperature at 25°C.
• GaASPV.data: The P-V simulated curve data of the sub-cell GaAs at irradiation at 1000 and temperature at 25°C.
• Ge_PV.data: The P-V simulated curve data of the sub-cell Ge at irradiation at 1000 and temperature at 25°C.
• MJ_PV.data: The P-V simulated curve data of the triple junction solar cell InGaP/GaAs/Ge at irradiation at 1000 and temperature at 25°C.
• ReadMe.rtf: readme file