This entry includes the MD trajectories of several semiconductor-water interfaces generated with ab initio molecular dynamics using the rVV10 density functional at the temperature of 350 K. Six semiconductor surfaces are involved, namely GaAs(110), GaP(110), GaN(10-10), CdS(10-10), rutile TiO2(110) and anatase TiO2(101). For GaAs, GaP and anatase TiO2, the trajectories for the interfaces with both the molecular and the dissociative adsorption mode of water are provided. For the molecular adsorption mode, we carried out MD simulations of semiconductor-water interfaces with one extra proton attached to the surface non-metal site and with one proton removed from H2O adsorbed, respectively. For the dissociative adsorption mode, we carried out MD simulations of semiconductor-water interfaces with one proton removed from the surface non-metal site and with one extra proton bound to OH- adsorbed, respectively.