Impact of orientation misalignments on black phosphorus ultrascaled field-effect transistors

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{
  "revision": 4, 
  "id": "1089", 
  "created": "2021-10-29T07:16:13.650513+00:00", 
  "metadata": {
    "doi": "10.24435/materialscloud:2v-ft", 
    "status": "published", 
    "title": "Impact of orientation misalignments on black phosphorus ultrascaled field-effect transistors", 
    "mcid": "2021.180", 
    "license_addendum": null, 
    "_files": [
      {
        "description": "Input data for the quantum transport simulations", 
        "key": "sc_bs_full_y.zip", 
        "size": 381884487, 
        "checksum": "md5:8d1c37270fa57db3f9f77ef545e83258"
      }, 
      {
        "description": "Input data for the quantum transport simulations", 
        "key": "sc_bs_full_xy.zip", 
        "size": 510503072, 
        "checksum": "md5:12acb6e3b84a5fd2f78cf851b1425aee"
      }, 
      {
        "description": "Input data for the quantum transport simulations", 
        "key": "sc_bs_full_x.zip", 
        "size": 439690613, 
        "checksum": "md5:0de15fa9dfed5fb997bf566a3670e08a"
      }, 
      {
        "description": "README", 
        "key": "README.txt", 
        "size": 132, 
        "checksum": "md5:06cbf4a6739b7372205a2616fa4966c7"
      }
    ], 
    "owner": 221, 
    "_oai": {
      "id": "oai:materialscloud.org:1089"
    }, 
    "keywords": [
      "Quantum transport", 
      "field-effect transistors", 
      "computational materials"
    ], 
    "conceptrecid": "1088", 
    "is_last": true, 
    "references": [
      {
        "type": "Journal reference", 
        "doi": "10.1109/LED.2021.3055287", 
        "citation": "C Klinkert, S Fiore, J Backman, Y Lee, M Luisier - IEEE Electron Device Letters, 2021"
      }
    ], 
    "publication_date": "Oct 29, 2021, 10:32:11", 
    "license": "Creative Commons Attribution 4.0 International", 
    "id": "1089", 
    "description": "Advanced quantum transport approach from first-principle to shed light on the influence of orientation misalignments on the performance of BP-based field-effect transistors, for which the input files are reported. Both n-and p-type configurations are investigated for six alignment angles, in the ballistic limit of transport and in the presence of electron-phonon and charged impurity scattering.", 
    "version": 1, 
    "contributors": [
      {
        "email": "edrick@iis.ee.ethz.ch", 
        "affiliations": [
          "Integrated System Laboratory, ETH Zurich, Switzerland"
        ], 
        "familyname": "Klinkert", 
        "givennames": "Cedric"
      }, 
      {
        "affiliations": [
          "Integrated System Laboratory, ETH Zurich, Switzerland"
        ], 
        "familyname": "Fiore", 
        "givennames": "Sara"
      }, 
      {
        "affiliations": [
          "Integrated System Laboratory, ETH Zurich, Switzerland"
        ], 
        "familyname": "Backmann", 
        "givennames": "Jonathan"
      }, 
      {
        "affiliations": [
          "Integrated System Laboratory, ETH Zurich, Switzerland"
        ], 
        "familyname": "Lee", 
        "givennames": "Youseung"
      }, 
      {
        "affiliations": [
          "Integrated System Laboratory, ETH Zurich, Switzerland"
        ], 
        "familyname": "Luisier", 
        "givennames": "Mathieu"
      }
    ], 
    "edited_by": 100
  }, 
  "updated": "2021-10-29T08:32:11.468276+00:00"
}