<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"> <dc:creator>Fiore, Sara</dc:creator> <dc:creator>Luisier, Mathieu</dc:creator> <dc:creator>Ducry, Fabian</dc:creator> <dc:creator>Klinkert, Cedric</dc:creator> <dc:creator>Backman, Jonathan</dc:creator> <dc:date>2021-12-08</dc:date> <dc:description>An ab initio study of the coupled electrons and phonon transport properties of MoS2-hBN devices. A comparison of the device characteristics when hBN is treated as a perfectly insulating, non vibrating layer and one where it is included in the DFT together with MoS2.</dc:description> <dc:identifier>https://archive.materialscloud.org/record/2021.215</dc:identifier> <dc:identifier>doi:10.24435/materialscloud:7f-5t</dc:identifier> <dc:identifier>mcid:2021.215</dc:identifier> <dc:identifier>oai:materialscloud.org:1160</dc:identifier> <dc:language>en</dc:language> <dc:publisher>Materials Cloud</dc:publisher> <dc:rights>info:eu-repo/semantics/openAccess</dc:rights> <dc:rights>Creative Commons Attribution 4.0 International https://creativecommons.org/licenses/by/4.0/legalcode</dc:rights> <dc:subject>Quantum transport</dc:subject> <dc:subject>ab initio</dc:subject> <dc:subject>thermal properties</dc:subject> <dc:title>Influence of the hBN dielectric layers on the quantum transport properties of MoS2 transistors.</dc:title> <dc:type>Dataset</dc:type> </oai_dc:dc>