Enhanced spin Hall ratio in two-dimensional III-V semiconductors

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{
  "id": "1871", 
  "updated": "2024-09-06T15:00:34.454936+00:00", 
  "metadata": {
    "version": 1, 
    "contributors": [
      {
        "givennames": "Jiaqi", 
        "affiliations": [
          "Institute of Condensed Matter and Nanosciences (IMCN), Universit\u00e9 catholique de Louvain (UCLouvain), B-1348, Louvain-la-Neuve, Belgium"
        ], 
        "email": "jiaqi.zhou@uclouvain.be", 
        "familyname": "Zhou"
      }, 
      {
        "givennames": "Samuel", 
        "affiliations": [
          "European Theoretical Spectroscopy Facility, Institute of Condensed Matter and Nanosciences (IMCN), Universit\u00e9 catholique de Louvain (UCLouvain), B-1348, Louvain-la-Neuve, Belgium"
        ], 
        "familyname": "Ponc\u00e9"
      }, 
      {
        "givennames": "Jean-Christophe", 
        "affiliations": [
          "Institute of Condensed Matter and Nanosciences (IMCN), Universit\u00e9 catholique de Louvain (UCLouvain), B-1348, Louvain-la-Neuve, Belgium"
        ], 
        "familyname": "Charlier"
      }
    ], 
    "title": "Enhanced spin Hall ratio in two-dimensional III-V semiconductors", 
    "_oai": {
      "id": "oai:materialscloud.org:1871"
    }, 
    "keywords": [
      "Quantum ESPRESSO", 
      "Wannier functions", 
      "two-dimensional", 
      "spin Hall effect", 
      "transport"
    ], 
    "publication_date": "Aug 25, 2023, 09:25:03", 
    "_files": [
      {
        "key": "io_files.tar.gz", 
        "description": "Input and output files of calculations. Details can be found in README.txt.", 
        "checksum": "md5:26ddabcde04e3c86021f42b0fc14aff3", 
        "size": 237515172
      }
    ], 
    "references": [
      {
        "citation": "Jiaqi Zhou, Samuel Ponc\u00e9, and Jean-Christophe Charlier, to be submitted (2023)", 
        "type": "Preprint"
      }
    ], 
    "description": "Spin Hall effect (SHE) plays a critical role in spintronics since it can convert charge current to spin current. Using state-of-the-art ab initio calculations including quadrupole and spin-orbit coupling, the charge and spin transports have been investigated in pristine and doped two-dimensional (2D) III-V semiconductors. Valence bands induce a strong scattering which limits charge conductivity in the hole-doped system, where spin Hall conductivity is enhanced by the spin-orbit splitting, yielding an ultrahigh spin Hall ratio \ud835\udf09\u22480.9 in GaAs monolayer at room temperature.", 
    "status": "published", 
    "license": "Creative Commons Attribution Non Commercial Share Alike 4.0 International", 
    "conceptrecid": "1870", 
    "is_last": false, 
    "mcid": "2023.131", 
    "edited_by": 576, 
    "id": "1871", 
    "owner": 1115, 
    "license_addendum": null, 
    "doi": "10.24435/materialscloud:z5-xz"
  }, 
  "revision": 14, 
  "created": "2023-08-23T14:52:35.981868+00:00"
}