Enhanced spin Hall ratio in two-dimensional III-V semiconductors
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{
"id": "1871",
"updated": "2024-09-06T15:00:34.454936+00:00",
"metadata": {
"version": 1,
"contributors": [
{
"givennames": "Jiaqi",
"affiliations": [
"Institute of Condensed Matter and Nanosciences (IMCN), Universit\u00e9 catholique de Louvain (UCLouvain), B-1348, Louvain-la-Neuve, Belgium"
],
"email": "jiaqi.zhou@uclouvain.be",
"familyname": "Zhou"
},
{
"givennames": "Samuel",
"affiliations": [
"European Theoretical Spectroscopy Facility, Institute of Condensed Matter and Nanosciences (IMCN), Universit\u00e9 catholique de Louvain (UCLouvain), B-1348, Louvain-la-Neuve, Belgium"
],
"familyname": "Ponc\u00e9"
},
{
"givennames": "Jean-Christophe",
"affiliations": [
"Institute of Condensed Matter and Nanosciences (IMCN), Universit\u00e9 catholique de Louvain (UCLouvain), B-1348, Louvain-la-Neuve, Belgium"
],
"familyname": "Charlier"
}
],
"title": "Enhanced spin Hall ratio in two-dimensional III-V semiconductors",
"_oai": {
"id": "oai:materialscloud.org:1871"
},
"keywords": [
"Quantum ESPRESSO",
"Wannier functions",
"two-dimensional",
"spin Hall effect",
"transport"
],
"publication_date": "Aug 25, 2023, 09:25:03",
"_files": [
{
"key": "io_files.tar.gz",
"description": "Input and output files of calculations. Details can be found in README.txt.",
"checksum": "md5:26ddabcde04e3c86021f42b0fc14aff3",
"size": 237515172
}
],
"references": [
{
"citation": "Jiaqi Zhou, Samuel Ponc\u00e9, and Jean-Christophe Charlier, to be submitted (2023)",
"type": "Preprint"
}
],
"description": "Spin Hall effect (SHE) plays a critical role in spintronics since it can convert charge current to spin current. Using state-of-the-art ab initio calculations including quadrupole and spin-orbit coupling, the charge and spin transports have been investigated in pristine and doped two-dimensional (2D) III-V semiconductors. Valence bands induce a strong scattering which limits charge conductivity in the hole-doped system, where spin Hall conductivity is enhanced by the spin-orbit splitting, yielding an ultrahigh spin Hall ratio \ud835\udf09\u22480.9 in GaAs monolayer at room temperature.",
"status": "published",
"license": "Creative Commons Attribution Non Commercial Share Alike 4.0 International",
"conceptrecid": "1870",
"is_last": false,
"mcid": "2023.131",
"edited_by": 576,
"id": "1871",
"owner": 1115,
"license_addendum": null,
"doi": "10.24435/materialscloud:z5-xz"
},
"revision": 14,
"created": "2023-08-23T14:52:35.981868+00:00"
}