<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"> <dc:creator>Zhou, Jiaqi</dc:creator> <dc:creator>Poncé, Samuel</dc:creator> <dc:creator>Charlier, Jean-Christophe</dc:creator> <dc:date>2023-08-25</dc:date> <dc:description>Spin Hall effect (SHE) plays a critical role in spintronics since it can convert charge current to spin current. Using state-of-the-art ab initio calculations including quadrupole and spin-orbit coupling, the charge and spin transports have been investigated in pristine and doped two-dimensional (2D) III-V semiconductors. Valence bands induce a strong scattering which limits charge conductivity in the hole-doped system, where spin Hall conductivity is enhanced by the spin-orbit splitting, yielding an ultrahigh spin Hall ratio 𝜉≈0.9 in GaAs monolayer at room temperature.</dc:description> <dc:identifier>https://archive.materialscloud.org/record/2023.131</dc:identifier> <dc:identifier>doi:10.24435/materialscloud:z5-xz</dc:identifier> <dc:identifier>mcid:2023.131</dc:identifier> <dc:identifier>oai:materialscloud.org:1871</dc:identifier> <dc:language>en</dc:language> <dc:publisher>Materials Cloud</dc:publisher> <dc:rights>info:eu-repo/semantics/openAccess</dc:rights> <dc:rights>Creative Commons Attribution Non Commercial Share Alike 4.0 International https://creativecommons.org/licenses/by-nc-sa/4.0/legalcode</dc:rights> <dc:subject>Quantum ESPRESSO</dc:subject> <dc:subject>Wannier functions</dc:subject> <dc:subject>two-dimensional</dc:subject> <dc:subject>spin Hall effect</dc:subject> <dc:subject>transport</dc:subject> <dc:title>Enhanced spin Hall ratio in two-dimensional III-V semiconductors</dc:title> <dc:type>Dataset</dc:type> </oai_dc:dc>