Ab initio simulation of band-to-band tunneling FETs with single- and few-layer 2-D materials as channels
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{
"created": "2020-05-12T13:53:14.440691+00:00",
"metadata": {
"references": [
{
"citation": "A. Szabo, C. Klinkert, D. Campi, C. Stieger, N. Marzari, and M. Luisier, IEEE Trans. Elec. Dev. 65, 4180-4187 (2018)",
"url": "",
"comment": "",
"doi": "10.1109/TED.2018.2840436",
"type": "Journal reference"
}
],
"mcid": "2019.0058/v1",
"id": "216",
"is_last": true,
"title": "Ab initio simulation of band-to-band tunneling FETs with single- and few-layer 2-D materials as channels",
"publication_date": "Oct 11, 2019, 00:00:00",
"edited_by": 98,
"_oai": {
"id": "oai:materialscloud.org:216"
},
"version": 1,
"description": "Full-band atomistic quantum transport simulations based on first principles are employed to assess the potential of band-to-band tunneling field-effect-transistors (TFETs) with a 2-D channel material as future electronic circuit components. We demonstrate that single layer transition metal dichalcogenides (TMDs) are not well-suited for TFET applications. There might, however, exist a great variety of 2-D semiconductors that have not even been exfoliated yet: this work pinpoints some of the most promising candidates among them to realize highly efficient TFETs. Single-layer SnTe, As, TiNBr, and Bi are all found to ideally deliver ON-currents larger than 100 \u03bcA/\u03bcm at 0.5 V supply voltage and 0.1 nA/\u03bcm OFF current value. We show that going from single to multiple layers can boost the TFET performance as long as the gain from a narrowing band gap exceeds the loss from the deteriorating gate control. Finally, a 2-D van der Waals heterojunction TFET is revealed to perform almost as well as the best single-layer homojunction, paving the way for research in optimal 2-D material combinations.",
"status": "published",
"license_addendum": "",
"keywords": [
"MARVEL/DD3",
"Device simulation",
"TFETs",
"2-D materials",
"Ab initio",
"Quantum Transport"
],
"license": "Creative Commons Attribution 4.0 International",
"owner": 40,
"contributors": [
{
"affiliations": [
"Integrated Systems Laboratory, ETH Z\u00fcrich, 8092 Z\u00fcrich, Switzerland"
],
"familyname": "Luisier",
"email": "mluisier@iis.ee.ethz.ch",
"givennames": "Mathieu"
},
{
"affiliations": [
"Integrated Systems Laboratory, ETH Z\u00fcrich, 8092 Z\u00fcrich, Switzerland"
],
"familyname": "Szabo",
"givennames": "Aron"
},
{
"affiliations": [
"Integrated Systems Laboratory, ETH Z\u00fcrich, 8092 Z\u00fcrich, Switzerland"
],
"familyname": "Klinkert",
"givennames": "Cedric"
},
{
"affiliations": [
"Laboratory of Theory and Simulation of Materials, EPFL, 1015 Lausanne, Switzerland"
],
"familyname": "Campi",
"givennames": "Davide"
},
{
"affiliations": [
"Integrated Systems Laboratory, ETH Z\u00fcrich, 8092 Z\u00fcrich, Switzerland"
],
"familyname": "Stieger",
"givennames": "Christian"
},
{
"affiliations": [
"Laboratory of Theory and Simulation of Materials, EPFL, 1015 Lausanne, Switzerland"
],
"familyname": "Marzari",
"givennames": "Nicola"
}
],
"conceptrecid": "215",
"doi": "10.24435/materialscloud:2019.0058/v1",
"_files": [
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"size": 2818187751,
"key": "TFET.tgz",
"description": "All data that were generated for this paper are included:\r\n- command files for the OMEN quantum transport simulator\r\n- Hamiltonian matrices expressed in a MLWF basis and stored as binary files\r\n- all simulation results (current, voltage, charge density, electrostatic potential, transmission function, density-of-states)",
"checksum": "md5:47ef20f43fbfa1637aeec5adda60cb14"
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{
"size": 318,
"key": "README.txt",
"description": "README.txt",
"checksum": "md5:d3767d9d767acae089d85f4304b79acd"
}
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},
"id": "216",
"updated": "2019-10-11T00:00:00+00:00",
"revision": 1
}