Ab initio simulation of band-to-band tunneling FETs with single- and few-layer 2-D materials as channels


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{
  "created": "2020-05-12T13:53:14.440691+00:00", 
  "metadata": {
    "references": [
      {
        "citation": "A. Szabo, C. Klinkert, D. Campi, C. Stieger, N. Marzari, and M. Luisier, IEEE Trans. Elec. Dev. 65, 4180-4187 (2018)", 
        "url": "", 
        "comment": "", 
        "doi": "10.1109/TED.2018.2840436", 
        "type": "Journal reference"
      }
    ], 
    "mcid": "2019.0058/v1", 
    "id": "216", 
    "is_last": true, 
    "title": "Ab initio simulation of band-to-band tunneling FETs with single- and few-layer 2-D materials as channels", 
    "publication_date": "Oct 11, 2019, 00:00:00", 
    "edited_by": 98, 
    "_oai": {
      "id": "oai:materialscloud.org:216"
    }, 
    "version": 1, 
    "description": "Full-band atomistic quantum transport simulations based on first principles are employed to assess the potential of band-to-band tunneling field-effect-transistors (TFETs) with a 2-D channel material as future electronic circuit components. We demonstrate that single layer transition metal dichalcogenides (TMDs) are not well-suited for TFET applications. There might, however, exist a great variety of 2-D semiconductors that have not even been exfoliated yet: this work pinpoints some of the most promising candidates among them to realize highly efficient TFETs. Single-layer SnTe, As, TiNBr, and Bi are all found to ideally deliver ON-currents larger than 100 \u03bcA/\u03bcm at 0.5 V supply voltage and 0.1 nA/\u03bcm OFF current value. We show that going from single to multiple layers can boost the TFET performance as long as the gain from a narrowing band gap exceeds the loss from the deteriorating gate control. Finally, a 2-D van der Waals heterojunction TFET is revealed to perform almost as well as the best single-layer homojunction, paving the way for research in optimal 2-D material combinations.", 
    "status": "published", 
    "license_addendum": "", 
    "keywords": [
      "MARVEL/DD3", 
      "Device simulation", 
      "TFETs", 
      "2-D materials", 
      "Ab initio", 
      "Quantum Transport"
    ], 
    "license": "Creative Commons Attribution 4.0 International", 
    "owner": 40, 
    "contributors": [
      {
        "affiliations": [
          "Integrated Systems Laboratory, ETH Z\u00fcrich, 8092 Z\u00fcrich, Switzerland"
        ], 
        "familyname": "Luisier", 
        "email": "mluisier@iis.ee.ethz.ch", 
        "givennames": "Mathieu"
      }, 
      {
        "affiliations": [
          "Integrated Systems Laboratory, ETH Z\u00fcrich, 8092 Z\u00fcrich, Switzerland"
        ], 
        "familyname": "Szabo", 
        "givennames": "Aron"
      }, 
      {
        "affiliations": [
          "Integrated Systems Laboratory, ETH Z\u00fcrich, 8092 Z\u00fcrich, Switzerland"
        ], 
        "familyname": "Klinkert", 
        "givennames": "Cedric"
      }, 
      {
        "affiliations": [
          "Laboratory of Theory and Simulation of Materials, EPFL, 1015 Lausanne, Switzerland"
        ], 
        "familyname": "Campi", 
        "givennames": "Davide"
      }, 
      {
        "affiliations": [
          "Integrated Systems Laboratory, ETH Z\u00fcrich, 8092 Z\u00fcrich, Switzerland"
        ], 
        "familyname": "Stieger", 
        "givennames": "Christian"
      }, 
      {
        "affiliations": [
          "Laboratory of Theory and Simulation of Materials, EPFL, 1015 Lausanne, Switzerland"
        ], 
        "familyname": "Marzari", 
        "givennames": "Nicola"
      }
    ], 
    "conceptrecid": "215", 
    "doi": "10.24435/materialscloud:2019.0058/v1", 
    "_files": [
      {
        "size": 2818187751, 
        "key": "TFET.tgz", 
        "description": "All data that were generated for this paper are included:\r\n- command files for the OMEN quantum transport simulator\r\n- Hamiltonian matrices expressed in a MLWF basis and stored as binary files\r\n- all simulation results (current, voltage, charge density, electrostatic potential, transmission function, density-of-states)", 
        "checksum": "md5:47ef20f43fbfa1637aeec5adda60cb14"
      }, 
      {
        "size": 318, 
        "key": "README.txt", 
        "description": "README.txt", 
        "checksum": "md5:d3767d9d767acae089d85f4304b79acd"
      }
    ]
  }, 
  "id": "216", 
  "updated": "2019-10-11T00:00:00+00:00", 
  "revision": 1
}