Electron transport through metal/MoS2 interfaces: edge- or area-dependent process?

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{
  "revision": 1, 
  "id": "220", 
  "created": "2020-05-12T13:53:15.362586+00:00", 
  "metadata": {
    "doi": "10.24435/materialscloud:2019.0060/v1", 
    "status": "published", 
    "title": "Electron transport through metal/MoS2 interfaces: edge- or area-dependent process?", 
    "mcid": "2019.0060/v1", 
    "license_addendum": "", 
    "_files": [
      {
        "description": "README File", 
        "key": "README.txt", 
        "size": 193, 
        "checksum": "md5:cbad23e51ac72216e81d912aabcfd6b3"
      }, 
      {
        "description": "Data File", 
        "key": "MoS2-TiO2-Ti.tgz", 
        "size": 19521629895, 
        "checksum": "md5:76e6473389a1f8b4c66f61fb8dc84494"
      }
    ], 
    "owner": 40, 
    "_oai": {
      "id": "oai:materialscloud.org:220"
    }, 
    "keywords": [
      "MARVEL/DD3", 
      "2-D materials", 
      "Metal-semiconductor interfaces", 
      "Contact physics", 
      " Transfer length", 
      "Fermi level pinning", 
      "Ab initio device simulations"
    ], 
    "conceptrecid": "219", 
    "is_last": true, 
    "references": [
      {
        "type": "Journal reference", 
        "doi": "10.1021/acs.nanolett.9b00678", 
        "url": "", 
        "comment": "", 
        "citation": "A. Szabo, A. Jain, M. Parzefall, L. Novotny, and M. Luisier, Nano Letters 19,  3641-3647 (2019)"
      }
    ], 
    "publication_date": "Oct 14, 2019, 00:00:00", 
    "license": "Creative Commons Attribution 4.0 International", 
    "id": "220", 
    "description": "In ultra-thin two-dimensional (2-D) materials, the formation of ohmic contacts with top metallic layers is a challenging task that involves different processes than in bulk-like structures. Besides the Schottky barrier height, the transfer length of electrons between metals and 2-D monolayers is a highly relevant parameter. For MoS2, both short (\u226430 nm) and long (\u22650.5 \u03bcm) values have been reported, corresponding to either an abrupt carrier injection at the contact edge or a more gradual transfer of electrons over a large contact area. Here we use ab initio quantum transport simulations to demonstrate that the presence of an oxide layer between a metallic contact and a MoS2 monolayer, for example TiO2 in case of titanium electrodes, favors an area-dependent process with a long transfer length, while a perfectly clean metal-semiconductor interface would lead to an edge process. These findings reconcile several theories that have been postulated about the physics of metal/MoS2 interfaces and provide a framework to design future devices with lower contact resistances.", 
    "version": 1, 
    "contributors": [
      {
        "email": "mluisier@iis.ee.ethz.ch", 
        "affiliations": [
          "Integrated Systems Laboratory, ETH Z\u00fcrich, 8092 Z\u00fcrich, Switzerland"
        ], 
        "familyname": "Luisier", 
        "givennames": "Mathieu"
      }, 
      {
        "affiliations": [
          "Integrated Systems Laboratory, ETH Z\u00fcrich, 8092 Z\u00fcrich, Switzerland"
        ], 
        "familyname": "Szabo", 
        "givennames": "Aron"
      }, 
      {
        "affiliations": [
          "Photonics Laboratory, ETH Z\u00fcrich, 8093 Z\u00fcrich, Switzerland"
        ], 
        "familyname": "Jain", 
        "givennames": "Achint"
      }, 
      {
        "affiliations": [
          "Photonics Laboratory, ETH Z\u00fcrich, 8093 Z\u00fcrich, Switzerland"
        ], 
        "familyname": "Parzefall", 
        "givennames": "Markus"
      }, 
      {
        "affiliations": [
          "Photonics Laboratory, ETH Z\u00fcrich, 8093 Z\u00fcrich, Switzerland"
        ], 
        "familyname": "Novotny", 
        "givennames": "Lukas"
      }
    ], 
    "edited_by": 98
  }, 
  "updated": "2019-10-14T00:00:00+00:00"
}