Deterministic grayscale nanotopography to engineer mobilities in strained MoS₂ FETs

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{
  "id": "2264", 
  "updated": "2024-07-22T14:12:40.075166+00:00", 
  "metadata": {
    "version": 1, 
    "contributors": [
      {
        "givennames": "Xia", 
        "affiliations": [
          "Microsystems Laboratory, \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), 1015 Lausanne, Switzerland"
        ], 
        "familyname": "Liu"
      }, 
      {
        "givennames": "Berke", 
        "affiliations": [
          "Microsystems Laboratory, \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), 1015 Lausanne, Switzerland"
        ], 
        "familyname": "Erbas"
      }, 
      {
        "givennames": "Ana", 
        "affiliations": [
          "Microsystems Laboratory, \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), 1015 Lausanne, Switzerland"
        ], 
        "familyname": "Conde Rubio"
      }, 
      {
        "givennames": "Norma", 
        "affiliations": [
          "Theory and Simulation of Materials (THEOS), and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne, CH-1015 Lausanne, Switzerland"
        ], 
        "email": "nrivano@g.harvard.edu", 
        "familyname": "Rivano"
      }, 
      {
        "givennames": "Zhenyu", 
        "affiliations": [
          "Laboratory of Nanoscale Electronics and Structures, \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), 1015 Lausanne, Switzerland"
        ], 
        "familyname": "Wang"
      }, 
      {
        "givennames": "Jin", 
        "affiliations": [
          "Laboratory of Quantum Physics, Topology and Correlations, \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), 1015 Lausanne, Switzerland"
        ], 
        "familyname": "Jiang"
      }, 
      {
        "givennames": "Siiri", 
        "affiliations": [
          "Department of Chemistry and Applied Biosciences, ETH Zurich, 8093 Zurich, Switzerland"
        ], 
        "familyname": "Bienz"
      }, 
      {
        "givennames": "Naresh", 
        "affiliations": [
          "Department of Chemistry and Applied Biosciences, ETH Zurich, 8093 Zurich, Switzerland"
        ], 
        "familyname": "Kumar"
      }, 
      {
        "givennames": "Thibault", 
        "affiliations": [
          "Laboratoire Charles Coulomb (L2C), Universit\u00e9 de Montpellier, CNRS, Montpellier, France"
        ], 
        "email": "thibault.sohier@umontpellier.fr", 
        "familyname": "Sohier"
      }, 
      {
        "givennames": "Marcos", 
        "affiliations": [
          "Laboratory for Bio- and Nano- Instrumentation, \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), 1015 Lausanne, Switzerland"
        ], 
        "familyname": "Penedo"
      }, 
      {
        "givennames": "Mitali", 
        "affiliations": [
          "Laboratory of Quantum Physics, Topology and Correlations, \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), 1015 Lausanne, Switzerland"
        ], 
        "familyname": "Banerjee"
      }, 
      {
        "givennames": "Georg", 
        "affiliations": [
          "Laboratory for Bio- and Nano- Instrumentation, \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), 1015 Lausanne, Switzerland"
        ], 
        "familyname": "Fantner"
      }, 
      {
        "givennames": "Renato", 
        "affiliations": [
          "Department of Chemistry and Applied Biosciences, ETH Zurich, 8093 Zurich, Switzerland"
        ], 
        "familyname": "Zenobi"
      }, 
      {
        "givennames": "Nicola", 
        "affiliations": [
          "Theory and Simulation of Materials (THEOS), and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne, CH-1015 Lausanne, Switzerland", 
          "Laboratory for Materials Simulations, Paul Scherrer Institut, 5232 Villigen PSI, Switzerland"
        ], 
        "email": "nicola.marzari@epfl.ch", 
        "familyname": "Marzari"
      }, 
      {
        "givennames": "Andras", 
        "affiliations": [
          "Laboratory of Nanoscale Electronics and Structures, \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), 1015 Lausanne, Switzerland"
        ], 
        "familyname": "Kis"
      }, 
      {
        "givennames": "Giovanni", 
        "affiliations": [
          "Microsystems Laboratory, \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), 1015 Lausanne, Switzerland"
        ], 
        "familyname": "Boero"
      }, 
      {
        "givennames": "Juergen", 
        "affiliations": [
          "Microsystems Laboratory, \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), 1015 Lausanne, Switzerland"
        ], 
        "familyname": "Brugger"
      }
    ], 
    "title": "Deterministic grayscale nanotopography to engineer mobilities in strained MoS\u2082 FETs", 
    "_oai": {
      "id": "oai:materialscloud.org:2264"
    }, 
    "keywords": [
      "2D materials", 
      "electron-phonon coupling", 
      "transport", 
      "first principles", 
      "density-functional theory"
    ], 
    "publication_date": "Jul 22, 2024, 16:12:40", 
    "_files": [
      {
        "key": "Mobility_MoS2_strain.zip", 
        "description": "Main data and codes needed to reproduce the theoretical findings of the main paper.", 
        "checksum": "md5:2badc8a3b6fa14c91a09e952118976be", 
        "size": 2267421509
      }
    ], 
    "references": [
      {
        "comment": "", 
        "doi": "10.26434/chemrxiv-2024-5p0r4", 
        "citation": "Liu X, Erbas B, Conde-Rubio A, Rivano N, Wang Z, Jang J, et al. Deterministic grayscale nanotopography to engineer mobilities in strained MoS2 FETs. ChemRxiv. 2024; doi:10.26434/chemrxiv-2024-5p0r4", 
        "url": "https://doi.org/10.26434/chemrxiv-2024-5p0r4", 
        "type": "Preprint"
      }
    ], 
    "description": "Field-effect transistors (FETs) based on two-dimensional materials (2DMs) with atomically thin channels have emerged as a promising platform for beyond-silicon electronics. However, low carrier mobility in 2DM transistors driven by phonon scattering remains a critical challenge. To address this issue, we propose the controlled introduction of localized tensile strain as an effective mean to inhibit electron-phonon scattering in 2DM. Strain is achieved by conformally adhering the 2DM via van-der-Waals forces to a dielectric layer previously nanoengineered with a gray-tone topography. Our results show that monolayer MoS\u2082 FETs under tensile strain achieve an 8-fold increase in on-state current, reaching mobilities of 185 cm\u00b2/Vs at room temperature, in good agreement with theoretical calculations. The present work on nanotopographic grayscale surface engineering and the use of high-quality dielectric materials has the potential to find application in the nanofabrication of photonic and nanoelectronic devices. Here we report the main data and codes needed to reproduce the theoretical findings of this work.", 
    "status": "published", 
    "license": "Creative Commons Attribution 4.0 International", 
    "conceptrecid": "2263", 
    "is_last": true, 
    "mcid": "2024.109", 
    "edited_by": 576, 
    "id": "2264", 
    "owner": 1138, 
    "license_addendum": null, 
    "doi": "10.24435/materialscloud:j5-7n"
  }, 
  "revision": 8, 
  "created": "2024-07-18T11:52:05.651649+00:00"
}