<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"> <dc:creator>Xia, Chen Hao</dc:creator> <dc:creator>Deuschle, Leonard</dc:creator> <dc:creator>Cao, Jiang</dc:creator> <dc:creator>Maeder, Alexander</dc:creator> <dc:creator>Luisier, Mathieu</dc:creator> <dc:date>2024-10-08</dc:date> <dc:description>Band-to-band tunnelling field-effect transistors (TFETs) have long been considered as promising candidates for future low-power logic applications. However, fabricated TFETs rarely reach sub-60 mV/dec sub-threshold swings (SS) at room temperature. Previous theoretical studies identified Auger processes as possible mechanisms for the observed degradation of SS. Through first-principles quantum transport simulations incorporating carrier-carrier interactions within the Non-equilibrium Green's Function formalism through self-consistent GW approximation, we confirm here that Auger processes are indeed at least partly responsible for the poor performance of TFETs. Using a carbon nanotube TFET as testbed, we show that carrier-carrier scattering alone significantly increases the OFF-state current of these devices, thus worsening their sub-threshold behavior. The results are in the folder uploaded.</dc:description> <dc:identifier>https://archive.materialscloud.org/record/2024.149</dc:identifier> <dc:identifier>doi:10.24435/materialscloud:sm-90</dc:identifier> <dc:identifier>mcid:2024.149</dc:identifier> <dc:identifier>oai:materialscloud.org:2378</dc:identifier> <dc:language>en</dc:language> <dc:publisher>Materials Cloud</dc:publisher> <dc:rights>info:eu-repo/semantics/openAccess</dc:rights> <dc:rights>Creative Commons Attribution 4.0 International https://creativecommons.org/licenses/by/4.0/legalcode</dc:rights> <dc:subject>electronic structure</dc:subject> <dc:subject>transport</dc:subject> <dc:subject>Wannier functions</dc:subject> <dc:title>Influence of carrier-carrier interactions on the sub-threshold swing of band-to-band tunnelling transistors</dc:title> <dc:type>Dataset</dc:type> </oai_dc:dc>