2‐D materials for ultrascaled field-effect transistors: one hundred candidates under the ab initio microscope

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<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Klinkert, Cedric</dc:creator>
  <dc:creator>Szabó, Aron</dc:creator>
  <dc:creator>Stieger, Christian</dc:creator>
  <dc:creator>Campi, Davide</dc:creator>
  <dc:creator>Marzari, Nicola</dc:creator>
  <dc:creator>Luisier, Mathieu</dc:creator>
  <dc:date>2020-10-23</dc:date>
  <dc:description>Due to their remarkable properties, single-layer 2-D materials appear as excellent candidates to extend Moore’s scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal dichalcogenides, are still far from delivering the expected performance. Based on a recent theoretical study that predicts the existence of more than 1800 exfoliable 2-D materials, we investigate here the 100 most promising contenders for logic applications.</dc:description>
  <dc:identifier>https://archive.materialscloud.org/record/2020.130</dc:identifier>
  <dc:identifier>doi:10.24435/materialscloud:p8-se</dc:identifier>
  <dc:identifier>mcid:2020.130</dc:identifier>
  <dc:identifier>oai:materialscloud.org:570</dc:identifier>
  <dc:language>en</dc:language>
  <dc:publisher>Materials Cloud</dc:publisher>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>Creative Commons Attribution 4.0 International https://creativecommons.org/licenses/by/4.0/legalcode</dc:rights>
  <dc:subject>2D materials</dc:subject>
  <dc:subject>ab initio device simulation</dc:subject>
  <dc:subject>next-generation field-effect transistors</dc:subject>
  <dc:subject>performance comparison</dc:subject>
  <dc:subject>MARVEL/DD3</dc:subject>
  <dc:subject>CSCS</dc:subject>
  <dc:subject>SNSF</dc:subject>
  <dc:subject>PRACE</dc:subject>
  <dc:title>2‐D materials for ultrascaled field-effect transistors: one hundred candidates under the ab initio microscope</dc:title>
  <dc:type>Dataset</dc:type>
</oai_dc:dc>