Electronic transport across quantum dots in graphene nanoribbons: Toward built-in gap-tunable metal-semiconductor-metal heterojunctions


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{
  "id": "657", 
  "metadata": {
    "title": "Electronic transport across quantum dots in graphene nanoribbons: Toward built-in gap-tunable metal-semiconductor-metal heterojunctions", 
    "doi": "10.24435/materialscloud:cd-gr", 
    "license": "Creative Commons Attribution 4.0 International", 
    "keywords": [
      "GNR", 
      "Graphene", 
      "Nanoribbon", 
      "Quantum dot", 
      "Electronic transport", 
      "SNSF", 
      "MARVEL", 
      "CSCS"
    ], 
    "contributors": [
      {
        "affiliations": [
          "Institute of Physics, Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), 1015, Lausanne, Switzerland", 
          "National Centre for Computational Design and Discovery of Novel Materials (MARVEL), Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), 1015, Lausanne, Switzerland"
        ], 
        "familyname": "\u010cer\u0146evi\u010ds", 
        "givennames": "Kristi\u0101ns"
      }, 
      {
        "affiliations": [
          "Institute of Physics, Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), 1015, Lausanne, Switzerland", 
          "National Centre for Computational Design and Discovery of Novel Materials (MARVEL), Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), 1015, Lausanne, Switzerland"
        ], 
        "familyname": "Yazyev", 
        "givennames": "Oleg V."
      }, 
      {
        "affiliations": [
          "Institute of Physics, Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), 1015, Lausanne, Switzerland", 
          "National Centre for Computational Design and Discovery of Novel Materials (MARVEL), Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), 1015, Lausanne, Switzerland", 
          "School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA"
        ], 
        "familyname": "Pizzochero", 
        "email": "mpizzochero@g.harvard.edu", 
        "givennames": "Michele"
      }
    ], 
    "_files": [
      {
        "description": "Data", 
        "checksum": "md5:861410d059e48e5baff8d754dd422a9d", 
        "size": 66108592, 
        "key": "QD_data.zip"
      }, 
      {
        "description": "Readme file explaining the folder structure", 
        "checksum": "md5:b77186d62c0ba3c40259c4ab2c438f3f", 
        "size": 926, 
        "key": "README.txt"
      }
    ], 
    "references": [
      {
        "type": "Journal reference", 
        "doi": "10.1103/PhysRevB.102.201406", 
        "citation": "K. \u010cer\u0146evi\u010ds, O.V. Yazyev, M. Pizzochero, Phys. Rev. B 102, 201406(R) (2020)", 
        "comment": "Paper where the data is discussed", 
        "url": "https://journals.aps.org/prb/abstract/10.1103/PhysRevB.102.201406"
      }
    ], 
    "conceptrecid": "656", 
    "version": 1, 
    "edited_by": 100, 
    "id": "657", 
    "owner": 129, 
    "mcid": "2020.159", 
    "is_last": true, 
    "status": "published", 
    "description": "The success of all-graphene electronics is severely hindered by the challenging realization and subsequent integration of semiconducting channels and metallic contacts. Here, we comprehensively investigate the electronic transport across width-modulated heterojunctions consisting of a graphene quantum dot of varying lengths and widths embedded in a pair of armchair-edged metallic nanoribbons, of the kind recently fabricated via on-surface synthesis. We show that the presence of the quantum dot enables the opening of a width-dependent transport gap, thereby yielding built-in one-dimensional metal-semiconductor-metal junctions. Furthermore, we find that, in the vicinity of the band edges, the conductance is subject to a smooth transition from an antiresonant to a resonant transport regime upon increasing the channel length. These results are rationalized in terms of a competition between quantum-confinement effects and quantum dot-to-lead coupling. Overall, our work establishes graphene quantum dot nanoarchitectures as appealing platforms to seamlessly integrate gap-tunable semiconducting channels and metallic contacts into an individual nanoribbon, hence realizing self-contained carbon-based electronic devices.", 
    "license_addendum": null, 
    "_oai": {
      "id": "oai:materialscloud.org:657"
    }, 
    "publication_date": "Dec 04, 2020, 11:51:09"
  }, 
  "revision": 6, 
  "updated": "2020-12-04T10:51:09.095791+00:00", 
  "created": "2020-12-01T09:53:48.351851+00:00"
}