Transport signatures of temperature-induced chemical potential shift and Lifshitz transition in layered type-II Weyl semimetal TaIrTe4


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{
  "id": "665", 
  "metadata": {
    "title": "Transport signatures of temperature-induced chemical potential shift and Lifshitz transition in layered type-II Weyl semimetal TaIrTe4", 
    "doi": "10.24435/materialscloud:rz-fj", 
    "license": "Creative Commons Attribution 4.0 International", 
    "keywords": [
      "TaIrTe4", 
      "Lifshitz transition", 
      "thermoelectric power", 
      "Weyl semimetal", 
      "two-channel model", 
      "chemical potential shift", 
      "MARVEL", 
      "CSCS", 
      "EPFL"
    ], 
    "contributors": [
      {
        "affiliations": [
          "Key laboratory of advanced optoelectronic quantum architecture and measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, People\u2019s Republic of China", 
          "Micronano Centre, Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, 100081, Beijing, People\u2019s Republic of China"
        ], 
        "familyname": "Jian", 
        "givennames": "Yu"
      }, 
      {
        "affiliations": [
          "Institute of Physics, \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland", 
          "National Centre for Computational Design and Discovery of Novel Materials (MARVEL), \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland"
        ], 
        "familyname": "Wu", 
        "givennames": "QuanSheng"
      }, 
      {
        "affiliations": [
          "Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, People\u2019s Republic of China"
        ], 
        "familyname": "Yang", 
        "givennames": "Meng"
      }, 
      {
        "affiliations": [
          "Key laboratory of advanced optoelectronic quantum architecture and measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, People\u2019s Republic of China", 
          "Micronano Centre, Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, 100081, Beijing, People\u2019s Republic of China"
        ], 
        "familyname": "Feng", 
        "givennames": "Qi"
      }, 
      {
        "affiliations": [
          "Key laboratory of advanced optoelectronic quantum architecture and measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, People\u2019s Republic of China", 
          "Micronano Centre, Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, 100081, Beijing, People\u2019s Republic of China"
        ], 
        "familyname": "Duan", 
        "email": "junxi.duan@bit.edu.cn", 
        "givennames": "Junxi"
      }, 
      {
        "affiliations": [
          "Key laboratory of advanced optoelectronic quantum architecture and measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, People\u2019s Republic of China", 
          "Micronano Centre, Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, 100081, Beijing, People\u2019s Republic of China"
        ], 
        "familyname": "Chen", 
        "givennames": "Dongyun"
      }, 
      {
        "affiliations": [
          "Key laboratory of advanced optoelectronic quantum architecture and measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, People\u2019s Republic of China", 
          "Micronano Centre, Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, 100081, Beijing, People\u2019s Republic of China"
        ], 
        "familyname": "Wang", 
        "givennames": "Qinsheng"
      }, 
      {
        "affiliations": [
          "Key laboratory of advanced optoelectronic quantum architecture and measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, People\u2019s Republic of China", 
          "Micronano Centre, Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, 100081, Beijing, People\u2019s Republic of China"
        ], 
        "familyname": "Xiao", 
        "givennames": "Wende"
      }, 
      {
        "affiliations": [
          "Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, People\u2019s Republic of China"
        ], 
        "familyname": "Shi", 
        "givennames": "Youguo"
      }, 
      {
        "affiliations": [
          "Institute of Physics, \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland", 
          "National Centre for Computational Design and Discovery of Novel Materials (MARVEL), \u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland"
        ], 
        "familyname": "Yazyev", 
        "email": "oleg.yazyev@epfl.ch", 
        "givennames": "Oleg V."
      }, 
      {
        "affiliations": [
          "Key laboratory of advanced optoelectronic quantum architecture and measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, People\u2019s Republic of China", 
          "Micronano Centre, Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, 100081, Beijing, People\u2019s Republic of China"
        ], 
        "familyname": "Yao", 
        "givennames": "Yugui"
      }
    ], 
    "_files": [
      {
        "description": "Input files for software package VASP and Wannier90 necessary to reproduce the band structures, Fermi surface, and thermoelectric power in the reference.", 
        "checksum": "md5:ccd9a9f86a004a78b8cf1ad27360deaf", 
        "size": 58647560, 
        "key": "TaIrTe4_data_archive.tar.gz"
      }, 
      {
        "description": "README file", 
        "checksum": "md5:9d675d31ac033a94d440cb598d294ecf", 
        "size": 282, 
        "key": "README.txt"
      }
    ], 
    "references": [
      {
        "type": "Journal reference", 
        "doi": "10.1088/2053-1583/abc13f", 
        "citation": "Y. Jian, Q.-S. Wu, M. Yang, Q. Feng, J. Duan, D. Chen, Q. Wang, W. Xiao, Y. Shi, O. V. Yazyev, Y. Yao, 2D Mater. 8 015020 (2021)", 
        "comment": "Paper in which the data is discussed.", 
        "url": "https://doi.org/10.1088/2053-1583/abc13f"
      }
    ], 
    "conceptrecid": "664", 
    "version": 1, 
    "edited_by": 100, 
    "id": "665", 
    "owner": 65, 
    "mcid": "2021.7", 
    "is_last": true, 
    "status": "published", 
    "description": "Temperature-induced Lifshitz transitions have been identified in several materials. Their chemical potential shows a substantial shift with changing temperature. The common feature of these materials is the coexistence of electron and hole pockets in the vicinity of the chemical potential. Here, we report the observation of temperature-induced chemical potential shift and Lifshitz transition in a layered type-II Weyl semimetal, TaIrTe4. The reversal of the polarity of the Hall resistivity and thermoelectric power (TEP) as the temperature increases clearly signal an appreciable shift of the chemical potential and change of the Fermi surface. It is corroborated by the improving agreement between the experimental TEP and the one calculated with temperature-dependent chemical potential. The complete disappearance of an electron pocket, consistent with the change of the Fermi surface when the chemical potential moves downwards, provides an evident signature of a temperature-induced Lifshitz transition in TaIrTe4.", 
    "license_addendum": null, 
    "_oai": {
      "id": "oai:materialscloud.org:665"
    }, 
    "publication_date": "Jan 09, 2021, 19:28:57"
  }, 
  "revision": 11, 
  "updated": "2021-01-09T18:28:57.556374+00:00", 
  "created": "2020-12-01T17:31:16.644764+00:00"
}