Atomic structures of semiconductor surfaces

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<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Chen, Wei</dc:creator>
  <dc:creator>Pasquarello, Alfredo</dc:creator>
  <dc:date>2018-12-10</dc:date>
  <dc:description>This entry includes the surface structures of some prototypical semiconductors obtained via structural optimizations using the PBE density functional. The structures were initially used for benchmarking ionization potentials calculated with hybrid density functionals and GW approximation.&#13;
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Seven semiconductor surfaces are provided in the form of Quantum ESPRESSO input: Si(111), C(111),  GaAs(110), GaP(110), ZnSe(110), ZnO(10-10), and TiO2(110). </dc:description>
  <dc:identifier>https://archive.materialscloud.org/record/2018.0022/v1</dc:identifier>
  <dc:identifier>doi:10.24435/materialscloud:2018.0022/v1</dc:identifier>
  <dc:identifier>mcid:2018.0022/v1</dc:identifier>
  <dc:identifier>oai:materialscloud.org:76</dc:identifier>
  <dc:language>en</dc:language>
  <dc:publisher>Materials Cloud</dc:publisher>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>Creative Commons Attribution 4.0 International https://creativecommons.org/licenses/by/4.0/legalcode</dc:rights>
  <dc:subject>semiconductor</dc:subject>
  <dc:subject>surface</dc:subject>
  <dc:subject>ionization potential</dc:subject>
  <dc:title>Atomic structures of semiconductor surfaces</dc:title>
  <dc:type>Dataset</dc:type>
</oai_dc:dc>