Highly anisotropic interlayer magnetoresitance in ZrSiS nodal-line Dirac semimetal
- Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland and National Centre for Computational Design and Discovery of Novel Materials MARVEL, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
DOI10.24435/materialscloud:2019.0074/v1 (version v1, submitted on 29 October 2019)
How to cite this entry
Shengnan Zhang, Quansheng Wu, Oleg V. Yazyev, Highly anisotropic interlayer magnetoresitance in ZrSiS nodal-line Dirac semimetal, Materials Cloud Archive (2019), doi: 10.24435/materialscloud:2019.0074/v1.
In this work, we investigate the angle-dependent magnetoresistance (AMR) of the layered nodal-line Dirac semimetal ZrSiS for the in-plane and out-of-plane current directions. Combining the Fermi surfaces calculated from first principles with the Boltzmann’s semiclassical transport theory, we reproduce all the prominent features of the unusual behavior of the in-plane and out-of-plane AMR.We can conclude that the dominant contribution the cusplike AMR lies in open orbits of the hole pocket and, in general, AMR is strongly influenced by charge compensation effect and the off-diagonal conductivity tensor elements, which give rise to peculiar butterfly-shaped AMR.
Materials Cloud sections using this data
No Explore or Discover sections associated with this archive entry.
|2.0 MiB||This file contains a brief description(readme) and input data necessary to reproduce fig4 (the numerical simulation part) in the manuscript.
|545 Bytes||a brief description(readme) for the data|
29 October 2019 [This version]