Highly anisotropic interlayer magnetoresitance in ZrSiS nodal-line Dirac semimetal

Authors: Shengnan Zhang1*, Quansheng Wu1*, Oleg V. Yazyev1*

  1. Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland and National Centre for Computational Design and Discovery of Novel Materials MARVEL, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
  • Corresponding authors emails: shengnan.zhang@epfl.ch, quansheng.wu@epfl.ch, oleg.yazyev@epfl.ch

DOI10.24435/materialscloud:2019.0074/v1 (version v1, submitted on 29 October 2019)

How to cite this entry

Shengnan Zhang, Quansheng Wu, Oleg V. Yazyev, Highly anisotropic interlayer magnetoresitance in ZrSiS nodal-line Dirac semimetal, Materials Cloud Archive (2019), doi: 10.24435/materialscloud:2019.0074/v1.

Description

In this work, we investigate the angle-dependent magnetoresistance (AMR) of the layered nodal-line Dirac semimetal ZrSiS for the in-plane and out-of-plane current directions. Combining the Fermi surfaces calculated from first principles with the Boltzmann’s semiclassical transport theory, we reproduce all the prominent features of the unusual behavior of the in-plane and out-of-plane AMR.We can conclude that the dominant contribution the cusplike AMR lies in open orbits of the hole pocket and, in general, AMR is strongly influenced by charge compensation effect and the off-diagonal conductivity tensor elements, which give rise to peculiar butterfly-shaped AMR.

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External references

Journal reference (Paper in which the data is discussed)
M. Novak , S. N. Zhang, F. Orbanic ́, N. Biliškov, G. Eguchi, S. Paschen, A. Kimura, X. X. Wang, T. Osada, K. Uchida, M. Sato, Q. S. Wu, O. V. Yazyev, and I. Kokanovic, PHYSICAL REVIEW B 100.085137 (2019). doi:10.1103/PhysRevB.100.085137

Keywords

MARVEL WannierTools magnetoresistance Boltzmann transport theory first principles Fermi surface

Version history

29 October 2019 [This version]