Phonon scattering rates data for silicon and HgTe
- 1. Department of Applied Physics and Materials Science, and Department of Physics, California Institute of Technology
Description
Phonon interactions from lattice anharmonicity govern thermal properties and heat transport in materials.
These interactions are described by n-th order interatomic force constants (n-IFCs), which can be viewed as high-dimensional tensors correlating the motion of n atoms, or equivalently encoding n-phonon scattering processes in momentum space.
Here, we introduce a tensor decomposition to efficiently compress n-IFCs for arbitrary order n.
Using tensor learning, we find optimal low-rank approximations of n-IFCs by solving the resulting optimization problem.
Our approach reveals the inherent low dimensionality of phonon-phonon interactions and allows compression of the 3 and 4-IFC tensors by factors of up to 10^3-10^4 while retaining high accuracy in calculations of phonon scattering rates and thermal conductivity.
Calculations of thermal conductivity using the compressed n-IFCs achieve a speed-up by nearly three orders of magnitude with >98% accuracy relative to the reference uncompressed solution. These calculations include both 3- and 4-phonon scattering and are shown for a diverse range of materials (Si, HgTe, MgO, TiNiSn and monoclinic ZrO2).
In addition to accelerating state-of-the-art thermal transport calculations, the method shown here paves the way for modeling strongly anharmonic materials and higher-order phonon interactions.
This data contains the phonon scattering rates data with full and compressed phonon-phonon interactions. The data corresponds to Figure 3 in the paper and includes information on the phonon scattering rates for two materials: silicon and HgTe.
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References
Journal reference Y. Luo, D. Mangtani, S. Peng, J. Yao, S. Kliavinek, M. Bernardi, submitted.