Hydrogen-induced insulating state accompanied by inter-layer charge ordering in SmNiO₃
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- 1. Department of Precision Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Description
The effect of hydrogen doping on the crystal structure and the electronic state in SmNiO₃ is investigated by means of density-functional theory with a combinatorial structure-generation approach. While 100% of hydrogen doping per Ni atom has been supposed to be responsible for the experimentally observed insulating phase, we found that 50% of hydrogen doping results in an outstandingly stable atomic structure showing the insulating property. The stable crystal structure shows the peculiar layered pattern of charge disproportionation of Ni²⁺ and Ni³⁺ valences together with the strong Jahn-Teller distortion that causes the eg orbital state splitting and opens the band gap.
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References
Preprint K. Yamauchi and I. Hamada, arXiv:2210.07656 [cond-mat.str-el]; submitted for publication., doi: 10.48550/arXiv.2210.07656