Challenging the p-type paradigm: intrinsic n-type mobility in antiferromagnetic Cr2O3
Creators
- 1. European Theoretical Spectroscopy Facility, Institute of Condensed Matter and Nanosciences, Université catholique de Louvain, Chemin des Étoiles 8, B-1348 Louvain-la-Neuve, Belgium
- 2. WEL Research Institute, avenue Pasteur 6, 1300 Wavre, Belgium.
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Description
Chromium oxide (Cr2O3) is widely considered a p-type transparent conducting oxide despite ongoing debate regarding its intrinsic transport character. Here, we resolve this question by computing phonon-limited electron and hole mobilities using the Boltzmann transport equation. We find that electron mobility systematically exceeds hole mobility over a wide temperature range, demonstrating that Cr2O3 is intrinsically n-type. Analysis of scattering mechanisms reveals that scattering with phonons affect electrons and holes similarly, and that the mobility asymmetry originates from the electronic structure, namely the larger effective mass and multi-valley character of the valence band. These results indicate that the commonly observed p-type behavior is likely extrinsic. The intrinsic n-type character, combined with moderate hole mobility, enables ambipolar transport and revises the role of Cr2O3 in transparent electronics. Additionally, the alignment of electrical and magnetic easy axes reveals coupling between charge transport and antiferromagnetic order, opening opportunities for magnetoelectric and spintronic devices
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References
Preprint A. A. Carrasco Alvarez, S. Ponce arXiv.2606.26269 (2026), doi: 10.48550/arXiv.2606.26269