Cedric Klinkert^1*, Sara Fiore¹, Jonathan Backmann¹, Youseung Lee¹, Mathieu Luisier¹

1 Integrated System Laboratory, ETH Zurich, Switzerland

* Corresponding authors emails: edrick@iis.ee.ethz.ch

DOI10.24435/materialscloud:2v-ft [version v1]

Publication date: Oct 29, 2021

How to cite this record

Cedric Klinkert, Sara Fiore, Jonathan Backmann, Youseung Lee, Mathieu Luisier, Impact of orientation misalignments on black phosphorus ultrascaled field-effect transistors, Materials Cloud Archive 2021.180 (2021), https://doi.org/10.24435/materialscloud:2v-ft

Description

Advanced quantum transport approach from first-principle to shed light on the influence of orientation misalignments on the performance of BP-based field-effect transistors, for which the input files are reported. Both n-and p-type configurations are investigated for six alignment angles, in the ballistic limit of transport and in the presence of electron-phonon and charged impurity scattering.

Materials Cloud sections using this data

Files

File name	Size	Description
sc_bs_full_y.zip MD5md5:8d1c37270fa57db3f9f77ef545e83258	364.2 MiB	Input data for the quantum transport simulations
sc_bs_full_xy.zip MD5md5:12acb6e3b84a5fd2f78cf851b1425aee	486.9 MiB	Input data for the quantum transport simulations
sc_bs_full_x.zip MD5md5:0de15fa9dfed5fb997bf566a3670e08a	419.3 MiB	Input data for the quantum transport simulations
README.txt MD5md5:06cbf4a6739b7372205a2616fa4966c7	132 Bytes	README

License

Files and data are licensed under the terms of the following license: Creative Commons Attribution 4.0 International.
Metadata, except for email addresses, are licensed under the Creative Commons Attribution Share-Alike 4.0 International license.

External references

Keywords

Quantum transport field-effect transistors computational materials