Publication date: Oct 11, 2019
Full-band atomistic quantum transport simulations based on first principles are employed to assess the potential of band-to-band tunneling field-effect-transistors (TFETs) with a 2-D channel material as future electronic circuit components. We demonstrate that single layer transition metal dichalcogenides (TMDs) are not well-suited for TFET applications. There might, however, exist a great variety of 2-D semiconductors that have not even been exfoliated yet: this work pinpoints some of the most promising candidates among them to realize highly efficient TFETs. Single-layer SnTe, As, TiNBr, and Bi are all found to ideally deliver ON-currents larger than 100 μA/μm at 0.5 V supply voltage and 0.1 nA/μm OFF current value. We show that going from single to multiple layers can boost the TFET performance as long as the gain from a narrowing band gap exceeds the loss from the deteriorating gate control. Finally, a 2-D van der Waals heterojunction TFET is revealed to perform almost as well as the best single-layer homojunction, paving the way for research in optimal 2-D material combinations.
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|2.6 GiB||All data that were generated for this paper are included: - command files for the OMEN quantum transport simulator - Hamiltonian matrices expressed in a MLWF basis and stored as binary files - all simulation results (current, voltage, charge density, electrostatic potential, transmission function, density-of-states)|