Mathieu Luisier^1*, Aron Szabo¹, Achint Jain², Markus Parzefall², Lukas Novotny²

1 Integrated Systems Laboratory, ETH Zürich, 8092 Zürich, Switzerland

2 Photonics Laboratory, ETH Zürich, 8093 Zürich, Switzerland

* Corresponding authors emails: mluisier@iis.ee.ethz.ch

DOI10.24435/materialscloud:2019.0060/v1 [version v1]

Publication date: Oct 14, 2019

How to cite this record

Mathieu Luisier, Aron Szabo, Achint Jain, Markus Parzefall, Lukas Novotny, Electron transport through metal/MoS2 interfaces: edge- or area-dependent process?, Materials Cloud Archive 2019.0060/v1 (2019), https://doi.org/10.24435/materialscloud:2019.0060/v1

Description

In ultra-thin two-dimensional (2-D) materials, the formation of ohmic contacts with top metallic layers is a challenging task that involves different processes than in bulk-like structures. Besides the Schottky barrier height, the transfer length of electrons between metals and 2-D monolayers is a highly relevant parameter. For MoS2, both short (≤30 nm) and long (≥0.5 μm) values have been reported, corresponding to either an abrupt carrier injection at the contact edge or a more gradual transfer of electrons over a large contact area. Here we use ab initio quantum transport simulations to demonstrate that the presence of an oxide layer between a metallic contact and a MoS2 monolayer, for example TiO2 in case of titanium electrodes, favors an area-dependent process with a long transfer length, while a perfectly clean metal-semiconductor interface would lead to an edge process. These findings reconcile several theories that have been postulated about the physics of metal/MoS2 interfaces and provide a framework to design future devices with lower contact resistances.

Materials Cloud sections using this data

Files

File name	Size	Description
README.txt MD5md5:cbad23e51ac72216e81d912aabcfd6b3	193 Bytes	README File
MoS2-TiO2-Ti.tgz MD5md5:76e6473389a1f8b4c66f61fb8dc84494	18.2 GiB	Data File

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External references

Keywords

MARVEL/DD3 2-D materials Metal-semiconductor interfaces Contact physics Transfer length Fermi level pinning Ab initio device simulations