Publication date: Nov 04, 2019
Two-dimensional materials are emerging as a promising platform for ultrathin channels in field-effect transistors. To this aim, novel high-mobility semiconductors need to be found or engineered. Although extrinsic mechanisms can in general be minimized by improving fabrication processes, the suppression of intrinsic scattering (driven, for example, by electron–phonon interactions) requires modification of the electronic or vibrational properties of the material. Because intervalley scattering critically affects mobilities, a powerful approach to enhance transport performance relies on engineering the valley structure. We show here the power of this strategy using uniaxial strain to lift degeneracies and suppress scattering into entire valleys, dramatically improving performance. This is shown in detail for arsenene, where a 2% strain stops scattering into four of the six valleys and leads to a 600% increase in mobility. The mechanism is general and can be applied to many other materials, including in particular the isostructural antimonene and blue phosphorene. In this entry we provide the AiiDA database with the calculation of the electron-phonon matrix elements for arsenene, both in the equilibrium and in the strained case, together with scripts to retrieve and plot them.
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|5.1 KiB||Brief description of the content of the files in this entry|
|678.4 KiB||Raw data to reproduce all the plots of the main text of the associated paper|
MD5md5:c9348306d646e45636d38fed497b3b90Open this AiiDA archive on renkulab.io (https://renkulab.io/)
|15.2 GiB||AiiDA export file including the electron-phonon data and their provenance (graph of all calculations that generated them including raw inputs and outputs)|
|4.0 KiB||Scripts to collect and plot the electron-phonon data, after importing the AiiDA export file into an AiiDA instance|
|2019.0075/v2 (version v2) [This version]||Nov 04, 2019||DOI10.24435/materialscloud:2019.0075/v2|
|2019.0075/v1 (version v1)||Oct 29, 2019||DOI10.24435/materialscloud:2019.0075/v1|