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2‐D materials for ultrascaled field-effect transistors: one hundred candidates under the ab initio microscope

Cedric Klinkert1*, Aron Szabó1, Christian Stieger1, Davide Campi2*, Nicola Marzari2*, Mathieu Luisier1*

1 Integrated System Laboratory, ETH Zurich, CH-8092 Zurich, Switzerland

2 Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

* Corresponding authors emails: cedrick@iis.ee.ethz.ch, davide.campi@epfl.ch, nicola.marzari@epfl.ch, mluisier@iis.ee.ethz.ch
DOI10.24435/materialscloud:p8-se [version v1]

Publication date: Oct 23, 2020

How to cite this record

Cedric Klinkert, Aron Szabó, Christian Stieger, Davide Campi, Nicola Marzari, Mathieu Luisier, 2‐D materials for ultrascaled field-effect transistors: one hundred candidates under the ab initio microscope, Materials Cloud Archive 2020.130 (2020), doi: 10.24435/materialscloud:p8-se.

Description

Due to their remarkable properties, single-layer 2-D materials appear as excellent candidates to extend Moore’s scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal dichalcogenides, are still far from delivering the expected performance. Based on a recent theoretical study that predicts the existence of more than 1800 exfoliable 2-D materials, we investigate here the 100 most promising contenders for logic applications.

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Keywords

2D materials ab initio device simulation next-generation field-effect transistors performance comparison MARVEL/DD3 CSCS SNSF PRACE

Version history:

2020.130 (version v1) [This version] Oct 23, 2020 DOI10.24435/materialscloud:p8-se