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Electronic transport across quantum dots in graphene nanoribbons: Toward built-in gap-tunable metal-semiconductor-metal heterojunctions

Kristiāns Čerņevičs1,2, Oleg V. Yazyev1,2, Michele Pizzochero1,2,3*

1 Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland

2 National Centre for Computational Design and Discovery of Novel Materials (MARVEL), Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland

3 School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA

* Corresponding authors emails: mpizzochero@g.harvard.edu
DOI10.24435/materialscloud:cd-gr [version v1]

Publication date: Dec 04, 2020

How to cite this record

Kristiāns Čerņevičs, Oleg V. Yazyev, Michele Pizzochero, Electronic transport across quantum dots in graphene nanoribbons: Toward built-in gap-tunable metal-semiconductor-metal heterojunctions, Materials Cloud Archive 2020.159 (2020), https://doi.org/10.24435/materialscloud:cd-gr

Description

The success of all-graphene electronics is severely hindered by the challenging realization and subsequent integration of semiconducting channels and metallic contacts. Here, we comprehensively investigate the electronic transport across width-modulated heterojunctions consisting of a graphene quantum dot of varying lengths and widths embedded in a pair of armchair-edged metallic nanoribbons, of the kind recently fabricated via on-surface synthesis. We show that the presence of the quantum dot enables the opening of a width-dependent transport gap, thereby yielding built-in one-dimensional metal-semiconductor-metal junctions. Furthermore, we find that, in the vicinity of the band edges, the conductance is subject to a smooth transition from an antiresonant to a resonant transport regime upon increasing the channel length. These results are rationalized in terms of a competition between quantum-confinement effects and quantum dot-to-lead coupling. Overall, our work establishes graphene quantum dot nanoarchitectures as appealing platforms to seamlessly integrate gap-tunable semiconducting channels and metallic contacts into an individual nanoribbon, hence realizing self-contained carbon-based electronic devices.

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README.txt
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Journal reference (Paper where the data is discussed)

Keywords

GNR Graphene Nanoribbon Quantum dot Electronic transport SNSF MARVEL CSCS

Version history:

2020.159 (version v1) [This version] Dec 04, 2020 DOI10.24435/materialscloud:cd-gr