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Influence of the hBN dielectric layers on the quantum transport properties of MoS2 transistors.

Sara Fiore1*, Mathieu Luisier1*, Fabian Ducry1*, Cedric Klinkert1*, Jonathan Backman1*

1 Integrated System Laboratory, ETH Zurich, Switzerland

* Corresponding authors emails: safiore@iis.ee.ethz.ch, mluisier@iis.ee.ethz.ch, fabian.ducry@iis.ee.ethz.ch, cedrick@iis.ee.ethz.ch, jbackman@iis.ee.ethz.ch
DOI10.24435/materialscloud:7f-5t [version v1]

Publication date: Dec 08, 2021

How to cite this record

Sara Fiore, Mathieu Luisier, Fabian Ducry, Cedric Klinkert, Jonathan Backman, Influence of the hBN dielectric layers on the quantum transport properties of MoS2 transistors., Materials Cloud Archive 2021.215 (2021), doi: 10.24435/materialscloud:7f-5t.


An ab initio study of the coupled electrons and phonon transport properties of MoS2-hBN devices. A comparison of the device characteristics when hBN is treated as a perfectly insulating, non vibrating layer and one where it is included in the DFT together with MoS2.

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37.8 MiB input files for DFT calculation and quantum transport


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External references

In preparation


Quantum transport ab initio thermal properties

Version history:

2021.215 (version v1) [This version] Dec 08, 2021 DOI10.24435/materialscloud:7f-5t