Published December 8, 2021
| Version v1
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Influence of the hBN dielectric layers on the quantum transport properties of MoS2 transistors.
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- 1. Integrated System Laboratory, ETH Zurich, Switzerland
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Description
An ab initio study of the coupled electrons and phonon transport properties of MoS2-hBN devices. A comparison of the device characteristics when hBN is treated as a perfectly insulating, non vibrating layer and one where it is included in the DFT together with MoS2.
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References
Journal reference S. Fiore, C. Klinkert, F. Ducry, J. Backman, and M. Luisier, Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS2 Transistors, Materials 15, 1062 (2022)., doi: 10.3390/ma15031062