×

Recommended by

Indexed by

Influence of the hBN dielectric layers on the quantum transport properties of MoS2 transistors.

Sara Fiore1*, Mathieu Luisier1*, Fabian Ducry1*, Cedric Klinkert1*, Jonathan Backman1*

1 Integrated System Laboratory, ETH Zurich, Switzerland

* Corresponding authors emails: safiore@iis.ee.ethz.ch, mluisier@iis.ee.ethz.ch, fabian.ducry@iis.ee.ethz.ch, cedrick@iis.ee.ethz.ch, jbackman@iis.ee.ethz.ch
DOI10.24435/materialscloud:7f-5t [version v1]

Publication date: Dec 08, 2021

How to cite this record

Sara Fiore, Mathieu Luisier, Fabian Ducry, Cedric Klinkert, Jonathan Backman, Influence of the hBN dielectric layers on the quantum transport properties of MoS2 transistors., Materials Cloud Archive 2021.215 (2021), doi: 10.24435/materialscloud:7f-5t.

Description

An ab initio study of the coupled electrons and phonon transport properties of MoS2-hBN devices. A comparison of the device characteristics when hBN is treated as a perfectly insulating, non vibrating layer and one where it is included in the DFT together with MoS2.

Materials Cloud sections using this data

No Explore or Discover sections associated with this archive record.

Files

File name Size Description
Quantum_transport_oxide.zip
MD5md5:d0df72b89e8eab874325fae35c83e7b2
37.8 MiB input files for DFT calculation and quantum transport

License

Files and data are licensed under the terms of the following license: Creative Commons Attribution 4.0 International.
Metadata, except for email addresses, are licensed under the Creative Commons Attribution Share-Alike 4.0 International license.

External references

Preprint
In preparation

Keywords

Quantum transport ab initio thermal properties

Version history:

2021.215 (version v1) [This version] Dec 08, 2021 DOI10.24435/materialscloud:7f-5t