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Linear and quadratic magnetoresistance in the semimetal SiP2

Yuxing Zhou1, Zhefeng Lou1, Shengnan Zhang2,3, Huancheng Chen1, Qin Chen1, Binjie Xu1, Jianhua Du4, Jinhu Yang5, Hangdong Wang5, Chuanying Xi6, Li Pi6,7, QuanSheng Wu2,3*, Oleg V. Yazyev2,3*, Minghu Fang1,8*

1 Department of Physics, Zhejiang University, Hangzhou 310027, China

2 Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

3 National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

4 Department of Applied Physics, China Jiliang University, Hangzhou 310018, China

5 Department of Physics, Hangzhou Normal University, Hangzhou 310036, China

6 Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China

7 Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China

8 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

* Corresponding authors emails: quansheng.wu@epfl.ch, oleg.yazyev@epfl.ch, mhfang@zju.edu.cn
DOI10.24435/materialscloud:ay-bf [version v1]

Publication date: Jan 09, 2021

How to cite this record

Yuxing Zhou, Zhefeng Lou, Shengnan Zhang, Huancheng Chen, Qin Chen, Binjie Xu, Jianhua Du, Jinhu Yang, Hangdong Wang, Chuanying Xi, Li Pi, QuanSheng Wu, Oleg V. Yazyev, Minghu Fang, Linear and quadratic magnetoresistance in the semimetal SiP2, Materials Cloud Archive 2021.5 (2021), https://doi.org/10.24435/materialscloud:ay-bf


Multiple mechanisms for extremely large magnetoresistance (XMR) found in many topologically nontrivial/trivial semimetals have been theoretically proposed, but experimentally it is unclear which mechanism is responsible in a particular sample. In this paper, by the combination of band structure calculations, numerical simulations of magnetoresistance (MR), Hall resistivity, and de Haas-van Alphen (dHvA) oscillation measurements, we studied the MR anisotropy of SiP2 which is verified to be a topologically trivial, incomplete compensation semimetal. It was found that as magnetic field H is applied along the a-axis, the MR exhibits an unsaturated nearly linear H dependence, which was argued to arise from incomplete carriers compensation. For the H // [101] orientation, an unsaturated nearly quadratic H dependence of MR up to 5.88 × 10^4%(at 1.8 K, 31.2 T) and field-induced up-turn behavior in resistivity were observed, which was suggested due to the existence of hole open orbits extending along the kx direction. Good agreement of the experimental results with the simulations based on the calculated Fermi surface (FS) indicates that the topology of FS plays an important role in its MR.

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File name Size Description
4.8 MiB Input files for software packages VASP, Wannier90, and WannierTools necessary to reproduce the band structures and Fermi surface plots in the reference.
438 Bytes README file


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SiP2 Magnetoresistance WannierTools MARVEL CSCS EPFL

Version history:

2021.5 (version v1) [This version] Jan 09, 2021 DOI10.24435/materialscloud:ay-bf