Yuxing Zhou¹, Zhefeng Lou¹, Shengnan Zhang^2,3, Huancheng Chen¹, Qin Chen¹, Binjie Xu¹, Jianhua Du⁴, Jinhu Yang⁵, Hangdong Wang⁵, Chuanying Xi⁶, Li Pi^6,7, QuanSheng Wu^2,3*, Oleg V. Yazyev^2,3*, Minghu Fang^1,8*

1 Department of Physics, Zhejiang University, Hangzhou 310027, China

2 Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

3 National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

4 Department of Applied Physics, China Jiliang University, Hangzhou 310018, China

5 Department of Physics, Hangzhou Normal University, Hangzhou 310036, China

6 Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China

7 Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China

8 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

* Corresponding authors emails: quansheng.wu@epfl.ch, oleg.yazyev@epfl.ch, mhfang@zju.edu.cn

DOI10.24435/materialscloud:ay-bf [version v1]

Publication date: Jan 09, 2021

How to cite this record

Yuxing Zhou, Zhefeng Lou, Shengnan Zhang, Huancheng Chen, Qin Chen, Binjie Xu, Jianhua Du, Jinhu Yang, Hangdong Wang, Chuanying Xi, Li Pi, QuanSheng Wu, Oleg V. Yazyev, Minghu Fang, Linear and quadratic magnetoresistance in the semimetal SiP2, Materials Cloud Archive 2021.5 (2021), https://doi.org/10.24435/materialscloud:ay-bf

Description

Multiple mechanisms for extremely large magnetoresistance (XMR) found in many topologically nontrivial/trivial semimetals have been theoretically proposed, but experimentally it is unclear which mechanism is responsible in a particular sample. In this paper, by the combination of band structure calculations, numerical simulations of magnetoresistance (MR), Hall resistivity, and de Haas-van Alphen (dHvA) oscillation measurements, we studied the MR anisotropy of SiP2 which is verified to be a topologically trivial, incomplete compensation semimetal. It was found that as magnetic field H is applied along the a-axis, the MR exhibits an unsaturated nearly linear H dependence, which was argued to arise from incomplete carriers compensation. For the H // [101] orientation, an unsaturated nearly quadratic H dependence of MR up to 5.88 × 10^4%(at 1.8 K, 31.2 T) and field-induced up-turn behavior in resistivity were observed, which was suggested due to the existence of hole open orbits extending along the kx direction. Good agreement of the experimental results with the simulations based on the calculated Fermi surface (FS) indicates that the topology of FS plays an important role in its MR.

Materials Cloud sections using this data

Files

File name	Size	Description
SiP2_205_archive.tar.gz MD5md5:ab1aa6e671d11b87e00cf51f2c8be24a	4.8 MiB	Input files for software packages VASP, Wannier90, and WannierTools necessary to reproduce the band structures and Fermi surface plots in the reference.
README.txt MD5md5:4afcd2b4776094b6698684a6564ae9a1	438 Bytes	README file

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External references

Keywords

SiP2 Magnetoresistance WannierTools MARVEL CSCS EPFL