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Transport signatures of temperature-induced chemical potential shift and Lifshitz transition in layered type-II Weyl semimetal TaIrTe4

Yu Jian1,2, QuanSheng Wu3,4, Meng Yang5, Qi Feng1,2, Junxi Duan1,2*, Dongyun Chen1,2, Qinsheng Wang1,2, Wende Xiao1,2, Youguo Shi5, Oleg V. Yazyev3,4*, Yugui Yao1,2

1 Key laboratory of advanced optoelectronic quantum architecture and measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, People’s Republic of China

2 Micronano Centre, Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, 100081, Beijing, People’s Republic of China

3 Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland

4 National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland

5 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, People’s Republic of China

* Corresponding authors emails: junxi.duan@bit.edu.cn, oleg.yazyev@epfl.ch
DOI10.24435/materialscloud:rz-fj [version v1]

Publication date: Jan 09, 2021

How to cite this record

Yu Jian, QuanSheng Wu, Meng Yang, Qi Feng, Junxi Duan, Dongyun Chen, Qinsheng Wang, Wende Xiao, Youguo Shi, Oleg V. Yazyev, Yugui Yao, Transport signatures of temperature-induced chemical potential shift and Lifshitz transition in layered type-II Weyl semimetal TaIrTe4, Materials Cloud Archive 2021.7 (2021), doi: 10.24435/materialscloud:rz-fj.

Description

Temperature-induced Lifshitz transitions have been identified in several materials. Their chemical potential shows a substantial shift with changing temperature. The common feature of these materials is the coexistence of electron and hole pockets in the vicinity of the chemical potential. Here, we report the observation of temperature-induced chemical potential shift and Lifshitz transition in a layered type-II Weyl semimetal, TaIrTe4. The reversal of the polarity of the Hall resistivity and thermoelectric power (TEP) as the temperature increases clearly signal an appreciable shift of the chemical potential and change of the Fermi surface. It is corroborated by the improving agreement between the experimental TEP and the one calculated with temperature-dependent chemical potential. The complete disappearance of an electron pocket, consistent with the change of the Fermi surface when the chemical potential moves downwards, provides an evident signature of a temperature-induced Lifshitz transition in TaIrTe4.

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File name Size Description
TaIrTe4_data_archive.tar.gz
MD5md5:ccd9a9f86a004a78b8cf1ad27360deaf
55.9 MiB Input files for software package VASP and Wannier90 necessary to reproduce the band structures, Fermi surface, and thermoelectric power in the reference.
README.txt
MD5md5:9d675d31ac033a94d440cb598d294ecf
282 Bytes README file

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Keywords

TaIrTe4 Lifshitz transition thermoelectric power Weyl semimetal two-channel model chemical potential shift MARVEL CSCS EPFL

Version history:

2021.7 (version v1) [This version] Jan 09, 2021 DOI10.24435/materialscloud:rz-fj