Peiyun Li¹, Junwei Shi^1,2, Zhen Huang², Yuqiu Lei³, Ting Lei^1*

1 School of Materials Science and Technology, Peking University, No.5 YiHeYuan Road, Haidian District, Beijing, P.R.China

2 College of Chemistry and Molecular Engineering, Peking University, No.5 YiHeYuan Road, Haidian District, Beijing, P.R.China

3 College of Engineering, Peking University, No.5 YiHeYuan Road, Haidian District, Beijing, P.R.China

* Corresponding authors emails: tinglei@pku.edu.cn

DOI10.24435/materialscloud:vs-79 [version v1]

Publication date: Sep 14, 2022

How to cite this record

Peiyun Li, Junwei Shi, Zhen Huang, Yuqiu Lei, Ting Lei, Switching p-type to high-performance n-type organic electrochemical transistors via doped state engineering, Materials Cloud Archive 2022.113 (2022), doi: 10.24435/materialscloud:vs-79.

Description

High-performance n-type organic electrochemical transistors (OECTs) are essential for logic circuits and sensors. However, the performances of n-type OECTs lag far behind that of p-type ones. Conventional wisdom posits that the LUMO energy level dictates the n-type performance. Herein, we show that engineering the doped state is more critical for n-type OECT polymers. By balancing more charges to the donor moiety, we could effectively switch a p-type polymer to high-performance n-type material. Based on this concept, the polymer, P(gTDPP2FT), exhibits a record high n-type OECT performance with μC* of 54.8 F cm⁻¹ V⁻¹ s⁻¹, mobility of 0.35 cm² V⁻¹ s⁻¹, and response speed of τon/τoff = 1.75/0.15 ms. Calculations and comparison studies show that the conversion is primarily due to the more uniform charges, stabilized negative polaron, enhanced conformation, and backbone planarity at negatively charged states. Our work highlights the critical role of understanding and engineering polymers’ doped states.

Materials Cloud sections using this data

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File name	Size	Description
Fig.2.zip MD5md5:9e458cbdc550b942537ae9cae2e1a8b9	234.2 KiB	Fig.2 contains the data related to Fig. 2 in the manuscript
Fig.3.zip MD5md5:0e4756c81b018e257c33e22214f8f1a4	482.3 KiB	Fig.3 contains the data related to Fig. 3 in the manuscript
Fig.4.zip MD5md5:9bfaaa5829d46d4307ea38f505e7e248	47.7 KiB	Fig.4 contains the data related to Fig. 4 in the manuscript
Fig.5.zip MD5md5:004473f436879fd7f23fa496410f750c	197.0 KiB	Fig.5 contains the data related to Fig. 5 in the manuscript
Fig SI.zip MD5md5:68ec3d2f0872950698059430a285b2f0	15.0 MiB	Fig.SI contains the data related to the figures in the supplementary information

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Keywords

n-type organic electrochemical transistor doped state engineering