Tunable topological Dirac surface states and van Hove singularities in kagome metal GdV6Sn6
Creators
- 1. Photon Science Division, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
- 2. CAS Key Laboratory of Theoretical Physics, Institute of Theoretical Physics, Chinese Academy of Sciences, Beijing 100190, China
- 3. Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
- 4. Department of Chemistry and Chemical Biology, Rutgers University, Piscataway, NJ 08854, USA
- 5. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- 6. Department of Physics, City University of Hong Kong, Kowloon, Hong Kong, China
- 7. City University of Hong Kong Shenzhen Re- search Institute, Shenzhen, China
- 8. Hong Kong Institute for Advanced Study, City University of Hong Kong, Kowloon, Hong Kong, China
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Description
Transition-metal-based kagome materials at van Hove filling are a rich frontier for the investigation of novel topological electronic states and correlated phenomena. To date, in the idealized two-dimensional kagome lattice, topologically Dirac surface states (TDSSs) have not been unambiguously observed, and the manipulation of TDSSs and van Hove singularities (VHSs) remains largely unexplored. Here, we reveal TDSSs originating from a Z2 bulk topology and identify multiple VHSs near the Fermi level (EF) in magnetic kagome material GdV6Sn6. Using in situ surface potassium deposition, we successfully realize manipulation of the TDSSs and VHSs. The Dirac point of the TDSSs can be tuned from above to below EF, which reverses the chirality of the spin texture at the Fermi surface. These results establish GdV6Sn6 as a fascinating platform for studying the nontrivial topology, magnetism, and correlation effects native to kagome lattices. They also suggest potential application of spintronic devices based on kagome materials.
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References
Journal reference (Additional data related to the paper.) Y. Hu et al., Sci. Adv. 8, eadd2024 (2022), doi: 10.1126/sciadv.add2024