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Growth optimization and device integration of narrow-bandgap graphene nanoribbons

Gabriela Borin Barin1, Qiang Sun1, Marco Di Giovannantonio1, Cheng-Zhuo Du2, Xiao-Ye Wang2, Juan Pablo Llinas3, Zafer Mutlu3, Yuxuan Lin3, Jan Wilhelm4, Jan Overbeck1, Colin Daniels5, Michael Lamparski5, Hafeesudeen Sahabudeen6, Mickael L. Perrin1, José I. Urgel1, Shantanu Mishra1, Amogh Kinikar1, Roland Widmer1, Samuel Stolz1, Max Bommert1, Carlo A. Pignedoli1*, Xinliang Feng6, Michel Calame1, Klaus Müllen7,8, Akimitsu Narita7,9, Vincent Meunier5, Jeffrey Bokor3, Roman Fasel10,1, Pascal Ruffieux1*

1 Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600 Switzerland

2 State Key Laboratory of Elemento-Organic Chemistry, College of Chemistry, Nankai University, Tianjin, 300071 China

3 Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720 USA

4 Institute of Theoretical Physics, University of Regensburg, D-93053 Regensburg, Germany

5 Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180 USA

6 Center for Advancing Electronics Dresden, Department of Chemistry and Food Chemistry, TU Dresden, 01062 Dresden, Germany

7 Max Planck Institute for Polymer Research, 55128 Mainz, Germany

8 Department of Chemistry, Johannes Gutenberg-Universität Mainz, 55128 Mainz, Germany

9 Organic and Carbon Nanomaterials Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna-son, Okinawa, 904-0495 Japan

10 Department of Chemistry, Biochemistry and Pharmaceutical Sciences, University of Bern, Bern, 3012 Switzerland

* Corresponding authors emails: carlo.pignedoli@empa.ch, pascal.ruffieux@empa.ch
DOI10.24435/materialscloud:h9-sr [version v1]

Publication date: Dec 08, 2022

How to cite this record

Gabriela Borin Barin, Qiang Sun, Marco Di Giovannantonio, Cheng-Zhuo Du, Xiao-Ye Wang, Juan Pablo Llinas, Zafer Mutlu, Yuxuan Lin, Jan Wilhelm, Jan Overbeck, Colin Daniels, Michael Lamparski, Hafeesudeen Sahabudeen, Mickael L. Perrin, José I. Urgel, Shantanu Mishra, Amogh Kinikar, Roland Widmer, Samuel Stolz, Max Bommert, Carlo A. Pignedoli, Xinliang Feng, Michel Calame, Klaus Müllen, Akimitsu Narita, Vincent Meunier, Jeffrey Bokor, Roman Fasel, Pascal Ruffieux, Growth optimization and device integration of narrow-bandgap graphene nanoribbons, Materials Cloud Archive 2022.169 (2022), doi: 10.24435/materialscloud:h9-sr.


The electronic, optical, and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In a recent work we study, the growth, characterization, and device integration of 5-atom wide armchair GNRs (5-AGNRs), which are expected to have an optimal bandgap as active material in switching devices. 5-AGNRs are obtained via on-surface synthesis under ultrahigh vacuum conditions from Br- and I-substituted precursors. It is shown that the use of I-substituted precursors and the optimization of the initial precursor coverage quintupled the average 5-AGNR length. This significant length increase allowed the integration of 5-AGNRs into devices and the realization of the first field-effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. The study highlights that the optimized growth protocols can successfully bridge between the sub-nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs. The record contains data supporting the results presented in the publication

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External references

Journal reference (Manuscript where the results are presented. Open Access)
G. Borin Barin, Q. Sun, M. Di Giovannantonio, C.-Z. Du, X.-Y. Wang, J. P. Llinas, Z. Mutlu, Y. Lin, J. Wilhelm, J. Overbeck, C. Daniels, M. Lamparski, H. Sahabudeen, M. L. Perrin, J. I. Urgel, S. Mishra, A. Kinikar, R. Widmer, S. Stolz, M. Bommert, C. Pignedoli, X. Feng, M. Calame, K. Müllen, A. Narita, V. Meunier, J. Bokor, R. Fasel, P. Ruffieux, Small 2202301 (2022). doi:10.1002/smll.202202301


MARVEL graphene nanoribbons GrapheneFlagship DFT GW Raman FET

Version history:

2022.169 (version v1) [This version] Dec 08, 2022 DOI10.24435/materialscloud:h9-sr