Published January 6, 2023 | Version v2
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Gap opening in double-sided highly hydrogenated free-standing graphene

  • 1. S3 Center, Istituto Nanoscienze, CNR, Via Campi 213/a, Modena, Italy
  • 2. FIM Department, University of Modena and Reggio Emilia, Via Campi 213/a, Modena, Italy

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Description

Conversion of graphene into pure free-standing graphane — where each C atom is sp³ bound to a hydrogen atom — has not been achieved so far, in spite of numerous experimental attempts. Here, we obtain an unprecedented level of hydrogenation (~90% of sp³ bonds) by exposing fully free-standing nano porous samples — constituted by single to few veils of smoothly rippled graphene — to atomic hydrogen in ultra-high-vacuum. Such a controlled hydrogenation of high-quality and high-specific-area samples converts the original conductive graphene into a wide gap semiconductor, with the valence band maximum (VBM) ~3.5 eV below the Fermi level, as monitored by photoemission spectro-microscopy and confirmed by theoretical predictions. In fact, the calculated band structure unequivocally identifies the achievement of a stable, double-side fully hydrogenated configuration, with no trace of pi states and a gap opening in excellent agreement with the experimental results.

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References

Journal reference (Paper in which methods are described and data are discussed)
M. G. Betti et al., Nano Letters 22(7) 2971-2977 (2022), doi: 10.1021/acs.nanolett.2c00162

Journal reference (Paper in which methods are described and data are discussed)
M. G. Betti et al., Nano Letters 22(7) 2971-2977 (2022)