Published March 2, 2023 | Version v1
Dataset Open

Device-to-materials pathway for electron traps detection in amorphous GeSe-based selectors

  • 1. CNR NANO, Via Campi 213, Modena, Italy
  • 2. Catalan Institute of Nanoscience and Nanotechnology (ICN2), UAB Campus, Bellaterra (Barcelona), 08193, Spain
  • 3. DIEF, University of Modena and Reggio Emilia, Via Pietro Vivarelli 10, Modena, Italy
  • 4. IMEC, B-3001 Leuven, Belgium
  • 5. AMAT - Applied Materials Italia, Via Meuccio Ruini 74L, Reggio Emilia, Italy

* Contact person

Description

The choice of the ideal material employed in selector devices is a tough task both from the theoretical and experimental side, especially due to the lack of a synergistic approach between techniques able to correlate specific material properties with device characteristics. Using a material-to-device multiscale technique, a reliable protocol for an efficient characterization of the active traps in amorphous GeSe chalcogenide is proposed. The resulting trap maps trace back the specific features of materials responsible for the measured findings, and connect them to an atomistic description of the sample. The metrological approach can be straightforwardly extended to other materials and devices, which is very beneficial for an efficient material-device codesign and the optimization of novel technologies.

Files

File preview

files_description.md

All files

Files (10.6 MiB)

Name Size
md5:c39791c01736c0e317faf08b9a804d38
288 Bytes Preview Download
md5:2f39f8b6a4eef436fa63b385214e9980
731 Bytes Preview Download
md5:93518b6fec17480ffd38fa86eeca2aee
10.6 MiB Download

References

Journal reference
A. Slassi, L.-S. Medondjio, A. Padovani, F. Tavanti, X. He, S. Clima, D. Garbin, B. Kaczer, L. Larcher, P. Ordejón, A. Calzolari, A.. Adv. Electron. Mater. 2201224 (2023)., doi: 10.1002/aelm.202201224