Recommended by

Indexed by

Device-to-materials pathway for electron traps detection in amorphous GeSe-based selectors

Amine Slassi1*, Linda-Sheila Medondjio2*, Andrea Padovani3*, Francesco Tavanti1*, Xu He2, Sergiu Clima4*, Daniele Garbin4*, Ben Kaczer4*, Luca Larcher5*, Pablo Ordejón2*, Arrigo Calzolari1*

1 CNR NANO, Via Campi 213, Modena, Italy

2 Catalan Institute of Nanoscience and Nanotechnology (ICN2), UAB Campus, Bellaterra (Barcelona), 08193, Spain

3 DIEF, University of Modena and Reggio Emilia, Via Pietro Vivarelli 10, Modena, Italy

4 IMEC, B-3001 Leuven, Belgium

5 AMAT - Applied Materials Italia, Via Meuccio Ruini 74L, Reggio Emilia, Italy

* Corresponding authors emails: amine.slassi@nano.cnr.it, linda.medondjio@icn2.cat, Andrea_Padovani@amat.com, francesco.tavanti@nano.cnr.it, Sergiu.Clima@imec.be, Daniele.Garbin@imec.be, Ben.Kaczer@imec.be, Luca_Larcher@amat.com, pablo.ordejon@icn2.cat, arrigo.calzolari@nano.cnr.it
DOI10.24435/materialscloud:fk-jg [version v1]

Publication date: Mar 02, 2023

How to cite this record

Amine Slassi, Linda-Sheila Medondjio, Andrea Padovani, Francesco Tavanti, Xu He, Sergiu Clima, Daniele Garbin, Ben Kaczer, Luca Larcher, Pablo Ordejón, Arrigo Calzolari, Device-to-materials pathway for electron traps detection in amorphous GeSe-based selectors, Materials Cloud Archive 2023.33 (2023), doi: 10.24435/materialscloud:fk-jg.


The choice of the ideal material employed in selector devices is a tough task both from the theoretical and experimental side, especially due to the lack of a synergistic approach between techniques able to correlate specific material properties with device characteristics. Using a material-to-device multiscale technique, a reliable protocol for an efficient characterization of the active traps in amorphous GeSe chalcogenide is proposed. The resulting trap maps trace back the specific features of materials responsible for the measured findings, and connect them to an atomistic description of the sample. The metrological approach can be straightforwardly extended to other materials and devices, which is very beneficial for an efficient material-device codesign and the optimization of novel technologies.

Materials Cloud sections using this data

No Explore or Discover sections associated with this archive record.


File name Size Description
10.6 MiB Structures employed for the DFT calculations for the three stoichiometries
731 Bytes README file to understand the content of each folder


Files and data are licensed under the terms of the following license: Creative Commons Attribution 4.0 International.
Metadata, except for email addresses, are licensed under the Creative Commons Attribution Share-Alike 4.0 International license.

External references

Journal reference
A. Slassi, L.-S. Medondjio, A. Padovani, F. Tavanti, X. He, S. Clima, D. Garbin, B. Kaczer, L. Larcher, P. Ordejón, A. Calzolari, A.. Adv. Electron. Mater. 2201224 (2023). doi:10.1002/aelm.202201224


selectors Intersect chalcogenides amorphous electronic structure device-to-materials OpenModel

Version history:

2023.33 (version v1) [This version] Mar 02, 2023 DOI10.24435/materialscloud:fk-jg