Device-to-materials pathway for electron traps detection in amorphous GeSe-based selectors
Creators
- 1. CNR NANO, Via Campi 213, Modena, Italy
- 2. Catalan Institute of Nanoscience and Nanotechnology (ICN2), UAB Campus, Bellaterra (Barcelona), 08193, Spain
- 3. DIEF, University of Modena and Reggio Emilia, Via Pietro Vivarelli 10, Modena, Italy
- 4. IMEC, B-3001 Leuven, Belgium
- 5. AMAT - Applied Materials Italia, Via Meuccio Ruini 74L, Reggio Emilia, Italy
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Description
The choice of the ideal material employed in selector devices is a tough task both from the theoretical and experimental side, especially due to the lack of a synergistic approach between techniques able to correlate specific material properties with device characteristics. Using a material-to-device multiscale technique, a reliable protocol for an efficient characterization of the active traps in amorphous GeSe chalcogenide is proposed. The resulting trap maps trace back the specific features of materials responsible for the measured findings, and connect them to an atomistic description of the sample. The metrological approach can be straightforwardly extended to other materials and devices, which is very beneficial for an efficient material-device codesign and the optimization of novel technologies.
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References
Journal reference A. Slassi, L.-S. Medondjio, A. Padovani, F. Tavanti, X. He, S. Clima, D. Garbin, B. Kaczer, L. Larcher, P. Ordejón, A. Calzolari, A.. Adv. Electron. Mater. 2201224 (2023)., doi: 10.1002/aelm.202201224