Xia Liu¹, Berke Erbas¹, Ana Conde Rubio¹, Norma Rivano^2*, Zhenyu Wang³, Jin Jiang⁴, Siiri Bienz⁵, Naresh Kumar⁵, Thibault Sohier^6*, Marcos Penedo⁷, Mitali Banerjee⁴, Georg Fantner⁷, Renato Zenobi⁵, Nicola Marzari^2,8*, Andras Kis³, Giovanni Boero¹, Juergen Brugger¹

1 Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland

2 Theory and Simulation of Materials (THEOS), and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

3 Laboratory of Nanoscale Electronics and Structures, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland

4 Laboratory of Quantum Physics, Topology and Correlations, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland

5 Department of Chemistry and Applied Biosciences, ETH Zurich, 8093 Zurich, Switzerland

6 Laboratoire Charles Coulomb (L2C), Université de Montpellier, CNRS, Montpellier, France

7 Laboratory for Bio- and Nano- Instrumentation, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland

8 Laboratory for Materials Simulations, Paul Scherrer Institut, 5232 Villigen PSI, Switzerland

* Corresponding authors emails: nrivano@g.harvard.edu, thibault.sohier@umontpellier.fr, nicola.marzari@epfl.ch

DOI10.24435/materialscloud:j5-7n [version v1]

Publication date: Jul 22, 2024

How to cite this record

Xia Liu, Berke Erbas, Ana Conde Rubio, Norma Rivano, Zhenyu Wang, Jin Jiang, Siiri Bienz, Naresh Kumar, Thibault Sohier, Marcos Penedo, Mitali Banerjee, Georg Fantner, Renato Zenobi, Nicola Marzari, Andras Kis, Giovanni Boero, Juergen Brugger, Deterministic grayscale nanotopography to engineer mobilities in strained MoS₂ FETs, Materials Cloud Archive 2024.109 (2024), https://doi.org/10.24435/materialscloud:j5-7n

Description

Field-effect transistors (FETs) based on two-dimensional materials (2DMs) with atomically thin channels have emerged as a promising platform for beyond-silicon electronics. However, low carrier mobility in 2DM transistors driven by phonon scattering remains a critical challenge. To address this issue, we propose the controlled introduction of localized tensile strain as an effective mean to inhibit electron-phonon scattering in 2DM. Strain is achieved by conformally adhering the 2DM via van-der-Waals forces to a dielectric layer previously nanoengineered with a gray-tone topography. Our results show that monolayer MoS₂ FETs under tensile strain achieve an 8-fold increase in on-state current, reaching mobilities of 185 cm²/Vs at room temperature, in good agreement with theoretical calculations. The present work on nanotopographic grayscale surface engineering and the use of high-quality dielectric materials has the potential to find application in the nanofabrication of photonic and nanoelectronic devices. Here we report the main data and codes needed to reproduce the theoretical findings of this work.

Materials Cloud sections using this data

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File name	Size	Description
Mobility_MoS2_strain.zip MD5md5:2badc8a3b6fa14c91a09e952118976be	2.1 GiB	Main data and codes needed to reproduce the theoretical findings of the main paper.

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Keywords

2D materials electron-phonon coupling transport first principles density-functional theory