Publication date: Aug 07, 2024
Due to presence of magnetic field gradient needed for coherent spin control, dephasing of single-electron spin qubits in silicon quantum dots is often dominated by 1/f charge noise. We investigate theoretically fluctuations of ground state energy of an electron in gated quantum dot in realistic Si/SiGe structure. We assume that the charge noise is caused by motion of charges trapped at the semiconductor-oxide interface. We consider a realistic range of trapped charge densities, ρ∼10¹⁰ cm⁻², and typical lenghtscales of isotropically distributed displacements of these charges, δr≤1 nm, and identify pairs (ρ,δr) for which the amplitude and shape of the noise spectrum is in good agreement with spectra reconstructed in recent experiments on similar structures.
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data_simulation1f.zip
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26.3 MiB | Code and data for regenerating figures and findings of the paper |
README.md
MD5md5:692d7a4898d9e98e7341865550216f2f
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1021 Bytes | Readme file |
2024.118 (version v1) [This version] | Aug 07, 2024 | DOI10.24435/materialscloud:mx-0w |