Marcin Kępa^1*, Łukasz Cywiński^1*, Jan A. Krzywda^1,2*

1 Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL 02-668 Warsaw, Poland

2 Lorentz Institute and Leiden Institute of Advanced Computer Science, Leiden University, P.O. Box 9506, 2300 RA Leiden, The Netherlands

* Corresponding authors emails: marcin.kepa@nbi.ku.dk, lcyw@ifpan.edu.pl, j.a.krzywda@liacs.leidenuniv.nl

DOI10.24435/materialscloud:91-mj [version v1]

Publication date: Aug 07, 2024

How to cite this record

Marcin Kępa, Łukasz Cywiński, Jan A. Krzywda, Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe Quantum Dot, Materials Cloud Archive 2024.120 (2024), https://doi.org/10.24435/materialscloud:91-mj

Description

Fluctuations of electric fields can change the position of a gate-defined quantum dot in a semiconductor heterostructure. In the presence of magnetic field gradient, these stochastic shifts of electron's wavefunction lead to fluctuations of electron's spin splitting. The resulting spin dephasing due to charge noise limits the coherence times of spin qubits in isotopically purified Si/SiGe quantum dots. We investigate the spin splitting noise caused by such process caused by microscopic motion of charges at the semiconductor-oxide interface. We compare effects of isotropic and planar displacement of the charges, and estimate their densities and typical displacement magnitudes that can reproduce experimentally observed spin splitting noise spectra. We predict that for defect density of 10¹⁰ cm⁻², visible correlations between noises in spin splitting and in energy of electron's ground state in the quantum dot, are expected.

Materials Cloud sections using this data

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data_correlations_1f.zip MD5md5:c36ea88d9c9b7f0150a121e74a48e6c7	25.6 MiB	Code and data for regenerating figures from the manuscripts
README.md MD5md5:d43cc99a50f96c13bd4e9b56408f6f3c	1.1 KiB	Readme file

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Keywords

Quantum dots Charge noise Simulations