Publication date: Oct 08, 2024
Band-to-band tunnelling field-effect transistors (TFETs) have long been considered as promising candidates for future low-power logic applications. However, fabricated TFETs rarely reach sub-60 mV/dec sub-threshold swings (SS) at room temperature. Previous theoretical studies identified Auger processes as possible mechanisms for the observed degradation of SS. Through first-principles quantum transport simulations incorporating carrier-carrier interactions within the Non-equilibrium Green's Function formalism through self-consistent GW approximation, we confirm here that Auger processes are indeed at least partly responsible for the poor performance of TFETs. Using a carbon nanotube TFET as testbed, we show that carrier-carrier scattering alone significantly increases the OFF-state current of these devices, thus worsening their sub-threshold behavior. The results are in the folder uploaded.
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File name | Size | Description |
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Review_data_MARVEL.zip
MD5md5:ffa52a929beaf98590820eb96f3ef6e3
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1.4 GiB | Folder containing the DFT, Wannierisation, quantum transport input and output data. |
README.md
MD5md5:7c6780a9fd7bcb755f0eed17627b4f21
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425 Bytes | README file describing the contents of the folder |
2024.149 (version v1) [This version] | Oct 08, 2024 | DOI10.24435/materialscloud:sm-90 |