Qianjin Lei^1*

1 School of aeronautics and astronautics, Zhejiang University, China

* Corresponding authors emails: qj_lei@zju.edu.cn

DOI10.24435/materialscloud:32-q6 [version v1]

Publication date: Nov 20, 2024

How to cite this record

Qianjin Lei, The effects of size and strain on the electronic behavior of AlN/GaN heterojunction, Materials Cloud Archive 2024.184 (2024), https://doi.org/10.24435/materialscloud:32-q6

Description

The electronic behavior of AlN/GaN heterojunction is investigated at thicknesses of 1.2~4.2 nm and biaxial strain of -8%~8% based on density functional theory. The structural stability, charge distribution, electronic properties, and transport properties of the cells reveal the enhancing effects of size and strain. With the thickness decreases, the bandgap values of the cells, as low as -0.387 eV, confirm the transition in structural nature, while the individual atomic layers remain bandgaps of at least 0.3 eV in DOS. The carrier mobility enhances to 2×10¹² m²/V/s. The cell with 1.2 nm thickness is weakened by 50% due to the quantum confinement effect. Under compressive strain ranging from -8% to 0%, the characteristics of heterojunctions are enhanced by an order of magnitude, in contrast, under 0%~8% tensile strain, the cells decrease slightly but for 2L cells.

Materials Cloud sections using this data

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File name	Size	Description
Readme.txt MD5md5:1ea8f25ac1594a759c138e7ac65e45a8	1.5 KiB	Readme
AlNGaN Manuscript.zip MD5md5:319730280f3ed11cfe04e0e254b7ca73	185.1 MiB	All the data in this work

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External references

Keywords

BandGap Heterojunction strain